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Malm, Bengt Gunnar
104  Ergebnisse:
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1

Enhanced Stochastic Bit Rate for Perpendicular Magnetic Tun..:

, In: 2023 International Conference on Noise and Fluctuations (ICNF),
Capriata, Corrado Carlo Maria ; Chaves-O'Flynn, Gabriel David ; Kent, Andrew D.. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

Citation Practices in Final Year Computer Science and Elect..:

, In: 2022 IEEE International Conference on Teaching, Assessment and Learning for Engineering (TALE),
Malm, Bengt Gunnar ; Hamrin, Kjell Goran - p. 65-70 , 2022
Link: https://doi.org/10.1109/..
 
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3

Impact of Random Grain Structure on Spin-Hall Nano-Oscillat..:

Capriata, Corrado Carlo Maria ; Jiang, Sheng ; Akerman, Johan.
IEEE Electron Device Letters.  43 (2022)  2 - p. 312-315 , 2022
Link: https://doi.org/10.1109/..
 
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4

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating..:

Hou, Shuoben ; Shakir, Muhammad ; Hellstrom, Per-Erik...
IEEE Journal of the Electron Devices Society.  8 (2020)  - p. 116-121 , 2020
Link: https://doi.org/10.1109/..
 
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5

Towards Silicon Carbide VLSI Circuits for Extreme Environme..:

Shakir, Muhammad ; Hou, Shuoben ; Hedayati, Raheleh...
Electronics.  8 (2019)  5 - p. 496 , 2019
Link: https://doi.org/10.3390/..
 
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6

High-Temperature Recessed Channel SiC CMOS Inverters and Ri..:

Ekstrom, Mattias ; Malm, Bengt Gunnar ; Zetterling, Carl-Mikael
IEEE Electron Device Letters.  40 (2019)  5 - p. 670-673 , 2019
Link: https://doi.org/10.1109/..
 
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7

A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipola..:

Hedayati, Raheleh ; Lanni, Luigia ; Rodriguez, Saul...
IEEE Electron Device Letters.  35 (2014)  7 - p. 693-695 , 2014
Link: https://doi.org/10.1109/..
 
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8

Implanted collector profile optimization in a SiGe HBT proc..:

Malm, Bengt Gunnar ; Johansson, Ted ; Arnborg, Torkel...
Solid-State Electronics.  45 (2001)  3 - p. 399-404 , 2001
Link: https://doi.org/10.1016/..
 
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9

Challenges for 10 nm MOSFET process integration:

Östling, Mikael ; Gunnar Malm, Bengt ; Von Haartman, Martin...
Journal of Telecommunications and Information Technology.  , 2007
Link: https://doi.org/10.26636..
 
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10

Energy Barriers for Thermally Activated Magnetization Rever..:

Capriata, Corrado Carlo Maria ; Malm, Bengt Gunnar ; Kent, Andrew D.
http://arxiv.org/abs/2305.09558.  , 2023
Link: http://arxiv.org/abs/230..
 
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11

Frequency Stability of Spin-Hall Nano-Oscillators with Real..:

Capriata, Corrado Carlo Maria ; Jiang, Sheng ; Dvornik, Mykola..
http://arxiv.org/abs/2012.07594.  , 2020
Link: http://arxiv.org/abs/201..
 
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12

ECL-based SiC logic circuits for extreme temperatures:

Lanni, Luigia ; Malm, Bengt Gunnar ; Östling, Mikael.
Materials Science Forum, 0255-5476, 2015, 821-823, s. 910-913.  , 2015
Link: http://urn.kb.se/resolve..
 
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13

Influence of Passivation Oxide Thickness and Device Layout ..:

Lanni, Luigia ; Malm, Bengt Gunnar ; Östling, Mikael.
IEEE Electron Device Letters, 0741-3106, 2015, 36:1, s. 11-13.  , 2015
Link: http://urn.kb.se/resolve..
 
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14

Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Inte..:

Suvanam, Sethu Saveda ; Lanni, Luigia ; Malm, Bengt Gunnar..
IEEE Transactions on Nuclear Science, 0018-9499, 2014, 61:4, s. 1772-1776.  , 2014
Link: http://urn.kb.se/resolve..
 
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15

A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC..:

Hedayati, Raheleh ; Lanni, Luigia ; Rodriguez, Saul...
IEEE Electron Device Letters, 0741-3106, 2014, 35:7, s. 693-695.  , 2014
Link: http://urn.kb.se/resolve..
 
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