Mancini, Stephen A
326  Ergebnisse:
Personensuche X
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1

600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MO..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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2

Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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3

Investigation of Static Performances of 1.2kV 4H-SiC MOSFET..:

Mancini, Stephen A. ; Jang, Seung Yup ; Chen, Zeyu...
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 150-158 , 2024
 
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4

Edge Termination Design Considerations for 1.2kV 4H-SiC MOS..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
 
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5

Static, Dynamic, and Short-circuit Characteristics of Split..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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7

Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integr..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
 
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10

Introducing the Condor array telescope II – deep imaging ob..:

Lanzetta, Kenneth M ; Gromoll, Stefan ; Shara, Michael M...
Monthly Notices of the Royal Astronomical Society.  529 (2024)  1 - p. 197-211 , 2024
 
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