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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
1
600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MO..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
2
Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing..:
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2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) ,
4
Edge Termination Design Considerations for 1.2kV 4H-SiC MOS..:
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2023 IEEE International Reliability Physics Symposium (IRPS) ,
5
Static, Dynamic, and Short-circuit Characteristics of Split..:
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2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) ,
7