E-LIB Suche - Ergebnisse für: Manifacier, J. C.

1

Backgating effect in III–V MESFET's: A physical model:

Manifacier, J.C. ; Ardebili, R.
Solid-State Electronics. 91 (2014) - p. 13-18 , 2014

Link: https://doi.org/10.1016/..

2

Contact vs bulk effects in N-semi-insulating-N and P-semi-i..:

Manifacier, J.C.
Solid-State Electronics. 80 (2013) - p. 45-54 , 2013

Link: https://doi.org/10.1016/..

3

Multiple steady state current–voltage characteristics in dr..:

Manifacier, J.C.
Solid-State Electronics. 54 (2010) 12 - p. 1511-1519 , 2010

Link: https://doi.org/10.1016/..

4

Theoretical and numerical investigations of carriers transp..:

Manifacier, J.C.
Solid-State Electronics. 52 (2008) 8 - p. 1162-1169 , 2008

Link: https://doi.org/10.1016/..

5

High level injection phenomena in P–N junctions:

Manifacier, J. C. ; Ardebili, R. ; Popescu, C.
Journal of Applied Physics. 80 (1996) 5 - p. 2838-2846 , 1996

Link: https://doi.org/10.1063/..

6

Current Induced Potential Well in Compensated Semiconductor:

Manifacier, J. C. ; Ardebili, R.
Physica Status Solidi (a). 158 (1996) 1 - p. 137-142 , 1996

Link: https://doi.org/10.1002/..

7

I—V Curve Shape Factor for Thin p—n Junctions at High Injec..:

Popescu, C. ; Manifacier, J. C. ; Ardebili, R.
Physica Status Solidi (a). 158 (1996) 2 - p. 611-621 , 1996

Link: https://doi.org/10.1002/..

8

Mesh optimization for the numerical simulation of ambipolar..:

Ardebili, R. ; Manifacier, J.C.
Computers & Electrical Engineering. 21 (1995) 5 - p. 359-365 , 1995

Link: https://doi.org/10.1016/..

9

Bulk and contact effects in p+-SI-n+ semi-insulating GaAs s..:

Manifacier, J. C. ; Ardebili, R.
Journal of Applied Physics. 77 (1995) 7 - p. 3174-3185 , 1995

Link: https://doi.org/10.1063/..

10

Influence of the surface roughness on the determination of ..:

Ardebili, R. ; Charles, J.-P. ; Martin, L...
Materials Research Bulletin. 25 (1990) 11 - p. 1407-1413 , 1990

Link: https://doi.org/10.1016/..

11

Schottky diode: Comments concerning the diode parameters de..:

Manifacier, J.-C. ; Brortryb, N. ; Ardebili, R..
Journal of Applied Physics. 64 (1988) 5 - p. 2502-2504 , 1988

Link: https://doi.org/10.1063/..

12

Space-charge conduction and relaxation in dielectric films:

Henisch, H. K. ; Manifacier, J.-C.
Journal of Applied Physics. 61 (1987) 12 - p. 5379-5385 , 1987

Link: https://doi.org/10.1063/..

13

A tunable, current-controlled, light-emitting diode:

Manifacier, J.C. ; Moreau, Y. ; Henisch, H.K.
Solid-State Electronics. 30 (1987) 3 - p. 354-357 , 1987

Link: https://doi.org/10.1016/..

14

Minority-carrier injection into relaxation semiconductors:

Moreau, Y. ; Manifacier, J.-C. ; Henisch, H. K.
Journal of Applied Physics. 60 (1986) 8 - p. 2904-2909 , 1986

Link: https://doi.org/10.1063/..

15

Electronic charge transport in high-resistivity semiconduct..:

Henisch, H. K. ; Manifacier, J.-C. ; Moreau, Y.
Philosophical Magazine B. 52 (1985) 3 - p. 379-389 , 1985

Link: https://doi.org/10.1080/..