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Manning, Ian
595  Ergebnisse:
Personensuche X
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1

Dynamic- X-Y: A Tool for Learning Dynamic Alert Suppression..:

, In: 2024 16th International Conference on COMmunication Systems & NETworkS (COMSNETS),
Bhukar, Karan ; Kumar, Harshit ; Nagar, Seema... - p. 291-293 , 2024
Link: https://doi.org/10.1109/..
 
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2

Measurement of Dislocation Density in SiC Wafers Using Prod..:

Soukhojak, Andrey ; Stannard, Tyler ; Manning, Ian...
Materials Science Forum.  1062 (2022)  - p. 304-308 , 2022
Link: https://doi.org/10.4028/..
 
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3

Advances in 200 mm 4H SiC Wafer Development and Production:

Manning, Ian ; Moeggenborg, Kevin ; Soukhojak, Andrey...
Materials Science Forum.  1062 (2022)  - p. 54-58 , 2022
Link: https://doi.org/10.4028/..
 
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4

Decoration and Density Increase of Dislocations in PVT-Grow..:

Chung, Gil ; Manning, Ian ; Soukhojak, Andrey..
Materials Science Forum.  1062 (2022)  - p. 246-250 , 2022
Link: https://doi.org/10.4028/..
 
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5

Synchrotron X-ray Topography Studies of Dislocation Behavio..:

Ailihumaer, Tuerxun ; Peng, Hongyu ; Liu, Yafei...
Journal of Electronic Materials.  50 (2021)  6 - p. 3258-3265 , 2021
Link: https://doi.org/10.1007/..
 
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6

Relationship Between Basal Plane Dislocation Distribution a..:

Ailihumaer, Tuerxun ; Peng, Hongyu ; Raghothamachar, Balaji...
Journal of Electronic Materials.  49 (2020)  6 - p. 3455-3464 , 2020
Link: https://doi.org/10.1007/..
 
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7

Comparing the Spatial Accuracy of Digital Surface Models fr..:

Rogers, Stephanie R. ; Manning, Ian ; Livingstone, William
Remote Sensing.  12 (2020)  17 - p. 2806 , 2020
Link: https://doi.org/10.3390/..
 
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8

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Pro..:

Manning, Ian ; Matsuda, Yusuke ; Chung, Gilyong...
Materials Science Forum.  1004 (2020)  - p. 37-43 , 2020
Link: https://doi.org/10.4028/..
 
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9

Synchrotron X-Ray Topography Study on the Relationship betw..:

Ailihumaer, Tuerxun ; Peng, Hong Yu ; Raghothamachar, Balaji...
Materials Science Forum.  1004 (2020)  - p. 393-400 , 2020
Link: https://doi.org/10.4028/..
 
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10

Investigation of Dislocation Behavior at the Early Stage of..:

Ailihumaer, Tuerxun ; Raghothamachar, Balaji ; Dudley, Michael...
Materials Science Forum.  1004 (2020)  - p. 44-50 , 2020
Link: https://doi.org/10.4028/..
 
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11

Influence of Dopant Concentration on Dislocation Distributi..:

Manning, Ian ; Chung, Gil Yong ; Sanchez, Edward...
Materials Science Forum.  963 (2019)  - p. 60-63 , 2019
Link: https://doi.org/10.4028/..
 
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12

Effect of Surface Etching Conditions on Stacking Faults in ..:

Rana, Tawhid ; Chung, Gil Yong ; Anderson, Steve...
Materials Science Forum.  963 (2019)  - p. 119-122 , 2019
Link: https://doi.org/10.4028/..
 
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13

Impact of Subsurface Damage on SiC Wafer Shape:

Moeggenborg, Kevin ; Manning, Ian ; Searson, Jon.
Materials Science Forum.  963 (2019)  - p. 530-533 , 2019
Link: https://doi.org/10.4028/..
 
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14

Optimization of 150 mm 4H SiC Substrate Crystal Quality:

Manning, Ian ; Chung, Gil Yong ; Sanchez, Edward...
Materials Science Forum.  924 (2018)  - p. 11-14 , 2018
Link: https://doi.org/10.4028/..
 
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15

Penetration Depth and Defect Image Contrast Formation in G..:

Yang, Yu ; Guo, Jianqiu ; Goue, Ouloide Yannick...
Journal of Electronic Materials.  47 (2017)  2 - p. 1218-1222 , 2017
Link: https://doi.org/10.1007/..
 
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