E-LIB Suche - Ergebnisse für: Mansurov, V.G.

1

Instability in a self-modeling crystallization front in a o..:

Mansurov, V. V. ; Fomina, N. G.
Journal of Engineering Physics. 45 (1983) 4 - p. 1173-1176 , 1983

Link: https://doi.org/10.1007/..

2

Sn-mediated transformations on Si(111) surface: Reconstruct..:

Petrov, A.S. ; Rogilo, D.I. ; Vergules, A.I....
Surface Science. 741 (2024) - p. 122418 , 2024

Link: https://doi.org/10.1016/..

3

Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van d..:

Maidebura, Y.E. ; Mansurov, V.G. ; Malin, T.V....
Applied Surface Science. 655 (2024) - p. 159595 , 2024

Link: https://doi.org/10.1016/..

4

Analysis of the AlN phase transition on a sapphire surface ..:

Milakhin, D S ; Malin, T V ; Mansurov, V G..
Journal of Physics: Conference Series. 1851 (2021) 1 - p. 012005 , 2021

Link: https://doi.org/10.1088/..

5

Peculiarities of the AlN crystalline phase formation in a r..:

Milakhin, D.S. ; Malin, T.V. ; Mansurov, V.G....
Applied Surface Science. 541 (2021) - p. 148548 , 2021

Link: https://doi.org/10.1016/..

6

Mg3N2 nanocrystallites formation during the GaN:Mg layers g..:

Malin, T.V. ; Mansurov, V.G. ; Galitsyn, Yu.G....
Journal of Crystal Growth. 554 (2021) - p. 125963 , 2021

Link: https://doi.org/10.1016/..

7

Growth of Nitride Heteroepitaxial Transistor Structures: fr..:

Malin, T. V. ; Milakhin, D. S. ; Mansurov, V. G....
Optoelectronics, Instrumentation and Data Processing. 56 (2020) 5 - p. 485-491 , 2020

Link: https://doi.org/10.3103/..

8

Forming the GaN Nanocrystals on the Graphene-Like g-AlN and..:

Milakhin, D. S. ; Malin, T. V. ; Mansurov, V. G....
Physics of the Solid State. 61 (2019) 12 - p. 2329-2334 , 2019

Link: https://doi.org/10.1134/..

9

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High..:

Malin, T. V. ; Milakhin, D. S. ; Aleksandrov, I. A....
Technical Physics Letters. 45 (2019) 8 - p. 761-764 , 2019

Link: https://doi.org/10.1134/..

10

Chemical kinetics and thermodynamics of the AlN crystalline..:

Milakhin, D. S. ; Malin, T. V. ; Mansurov, V. G...
Journal of Thermal Analysis and Calorimetry. 133 (2018) 2 - p. 1099-1107 , 2018

Link: https://doi.org/10.1007/..

11

Effect of the Sapphire-Nitridation Level and Nucleation-Lay..:

Malin, T. V. ; Milakhin, D. S. ; Mansurov, V. G....
Semiconductors. 52 (2018) 6 - p. 789-796 , 2018

Link: https://doi.org/10.1134/..

12

Formation of a Graphene-Like SiN Layer on the Surface Si(11..:

Mansurov, V. G. ; Galitsyn, Yu. G. ; Malin, T. V....
Semiconductors. 52 (2018) 12 - p. 1511-1517 , 2018

Link: https://doi.org/10.1134/..

13

Original method of GaN and InGaN quantum dots formation on ..:

Zhuravlev, K S ; Gulyaev, D V ; Aleksandrov, I A...
Journal of Physics: Conference Series. 864 (2017) - p. 012007 , 2017

Link: https://doi.org/10.1088/..

14

AlN/GaN heterostructures for normally-off transistors:

Zhuravlev, K. S. ; Malin, T. V. ; Mansurov, V. G....
Semiconductors. 51 (2017) 3 - p. 379-386 , 2017

Link: https://doi.org/10.1134/..

15

Normally off transistors based on in situ passivated AlN/Ga..:

Zhuravlev, K. S. ; Malin, T. V. ; Mansurov, V. G....
Technical Physics Letters. 42 (2016) 7 - p. 750-753 , 2016

Link: https://doi.org/10.1134/..