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Mao, Ge-Qi
6725  Ergebnisse:
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1

Unique switching mode of HfO2 among fluorite-type ferroelec..:

Mao, Ge-Qi ; Yu, Heng ; Xue, Kan-Hao...
Journal of Materials Chemistry C.  , 2024
Link: https://doi.org/10.1039/..
 
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2

In search of Pca21 phase ferroelectrics:

Mao, Ge-Qi ; Yuan, Jun-Hui ; Xue, Kan-Hao...
Journal of Physics: Materials.  6 (2023)  2 - p. 024001 , 2023
Link: https://doi.org/10.1088/..
 
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3

Impact of Zr substitution on the electronic structure of fe..:

Huang, Jinhai ; Mao, Ge-Qi ; Xue, Kan-Hao...
Journal of Applied Physics.  133 (2023)  18 - p. , 2023
Link: https://doi.org/10.1063/..
 
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4

Microscopic mechanism of imprint in hafnium oxide-based fer..:

Yuan, Peng ; Mao, Ge-Qi ; Cheng, Yan...
Nano Research.  15 (2022)  4 - p. 3667-3674 , 2022
Link: https://doi.org/10.1007/..
 
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5

Hafnia for analog memristor: Influence of stoichiometry and..:

Li, Li-Heng ; Xue, Kan-Hao ; Yuan, Jun-Hui..
Physical Review Materials.  6 (2022)  8 - p. , 2022
Link: https://doi.org/10.1103/..
 
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6

DFT-1/2 and shell DFT-1/2 methods: electronic structure cal..:

Mao, Ge-Qi ; Yan, Zhao-Yi ; Xue, Kan-Hao...
Journal of Physics: Condensed Matter.  34 (2022)  40 - p. 403001 , 2022
Link: https://doi.org/10.1088/..
 
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7

Ferroelectricity in HfO2 from a Coordination Number Perspec..:

Yuan, Jun-Hui ; Mao, Ge-Qi ; Xue, Kan-Hao...
Chemistry of Materials.  35 (2022)  1 - p. 94-103 , 2022
Link: https://doi.org/10.1021/..
 
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8

Evolution of the conductive filament system in HfO2-based m..:

Zhang, Ying ; Mao, Ge-Qi ; Zhao, Xiaolong...
Nature Communications.  12 (2021)  1 - p. , 2021
Link: https://doi.org/10.1038/..
 
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9

Homo-layer hafnia-based memristor with large analog switchi..:

Bai, Na ; Tian, Baoyi ; Mao, Ge-Qi...
Applied Physics Letters.  118 (2021)  4 - p. , 2021
Link: https://doi.org/10.1063/..
 
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10

A new family of two-dimensional ferroelastic semiconductors..:

Yuan, Jun-Hui ; Mao, Ge-Qi ; Xue, Kan-Hao..
Nanoscale.  12 (2020)  26 - p. 14150-14159 , 2020
Link: https://doi.org/10.1039/..
 
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11

Impact of Zr substitution on the electronic structure of fe..:

Huang, Jinhai ; Mao, Ge-Qi ; Xue, Kan-Hao...
http://arxiv.org/abs/2302.03852.  , 2023
Link: http://arxiv.org/abs/230..
 
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12

Hafnia for analog memristor: Influence of stoichiometry and..:

Li, Li-Heng ; Xue, Kan-Hao ; Yuan, Jun-Hui..
http://arxiv.org/abs/2203.16131.  , 2022
Link: http://arxiv.org/abs/220..
 
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13

Ferroelectricity in $\mathrm{HfO_2}$ from a chemical perspe..:

Yuan, Jun-Hui ; Mao, Ge-Qi ; Xue, Kan-Hao...
http://arxiv.org/abs/2201.00210.  , 2022
Link: http://arxiv.org/abs/220..
 
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14

Designing wake-up free ferroelectric capacitors based on th..:

Bai, Na ; Xue, Kan-Hao ; Huang, Jinhai...
http://arxiv.org/abs/2206.14393.  , 2022
Link: http://arxiv.org/abs/220..
 
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15

Evolution of the conductive filament system in HfO(2)-based..:

Zhang, Ying ; Mao, Ge-Qi ; Zhao, Xiaolong...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668918/.  , 2021
Link: http://www.ncbi.nlm.nih...
 
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