E-LIB Suche - Ergebnisse für: Marko, I. P.

1

Challenges for room temperature operation of electrically p..:

Ellis, A. R. ; Duffy, D. A. ; Marko, I. P....
Scientific Reports. 14 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

2

Erratum: "Thermal performance of GaInSb quantum well lasers..:

Fitch, C. R. ; Read, G. W. ; Marko, I. P....
Applied Physics Letters. 118 (2021) 18 - p. , 2021

Link: https://doi.org/10.1063/..

3

Pixelated full-colour small molecule semiconductor devices ..:

Skhunov, M. ; Solodukhin, A. N. ; Giannakou, P....
Journal of Materials Chemistry C. 9 (2021) 18 - p. 5858-5867 , 2021

Link: https://doi.org/10.1039/..

4

Thermal performance of GaInSb quantum well lasers for silic..:

Fitch, C. R. ; Read, G. W. ; Marko, I. P....
Applied Physics Letters. 118 (2021) 10 - p. 101105 , 2021

Link: https://doi.org/10.1063/..

5

A comparative study of epitaxial InGaAsBi/InP structures us..:

Sharpe, M. K. ; Marko, I. P. ; Duffy, D. A....
Journal of Applied Physics. 126 (2019) 12 - p. , 2019

Link: https://doi.org/10.1063/..

6

Open circuit voltage increase of GaSb/GaAs quantum ring sol..:

Montesdeoca, D. ; Carrington, P.J. ; Marko, I.P....
Solar Energy Materials and Solar Cells. 187 (2018) - p. 227-232 , 2018

Link: https://doi.org/10.1016/..

7

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavi..:

Ikyo, A. B. ; Marko, I. P. ; Hild, K....
Scientific Reports. 6 (2016) 1 - p. , 2016

Link: https://doi.org/10.1038/..

8

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near..:

Marko, I P ; Jin, S R ; Hild, K...
Semiconductor Science and Technology. 30 (2015) 9 - p. 094008 , 2015

Link: https://doi.org/10.1088/..

9

Electrically injected GaAsBi Quantum Well Lasers:

, In: 2014 International Semiconductor Laser Conference,

Sweeney, S.J. ; Marko, I.P. ; Jin, S.R.... - p. 80-81 , 2014

Link: https://doi.org/10.1109/..

10

Characterization of 2.3 μm GaInAsSb-based vertical-cavity s..:

Chai, G. M. T. ; Hosea, T. J. C. ; Fox, N. E....
Journal of Applied Physics. 115 (2014) 1 - p. , 2014

Link: https://doi.org/10.1063/..

11

Physical properties and optimization of GaBiAs/(Al)GaAs bas..:

Marko, I P ; Ludewig, P ; Bushell, Z L...
Journal of Physics D: Applied Physics. 47 (2014) 34 - p. 345103 , 2014

Link: https://doi.org/10.1088/..

12

Optical properties of InGaN‐based LEDs investigated using h..:

Crutchley, B. G. ; Marko, I. P. ; Pal, J...
physica status solidi (b). 250 (2013) 4 - p. 698-702 , 2013

Link: https://doi.org/10.1002/..

13

Enhancement of efficiency of InGaN-based light emitting dio..:

Pal, J. ; Migliorato, M. A. ; Li, C.-K....
Journal of Applied Physics. 114 (2013) 7 - p. , 2013

Link: https://doi.org/10.1063/..

14

Investigations of carrier scattering into L‐valley in λ = 3..:

Aldukhayel, A. ; Jin, S. R. ; Marko, I. P....
physica status solidi (b). 250 (2013) 4 - p. 693-697 , 2013

Link: https://doi.org/10.1002/..

15

Electrical injection Ga(AsBi)/(AlGa)As single quantum well ..:

Ludewig, P. ; Knaub, N. ; Hossain, N....
Applied Physics Letters. 102 (2013) 24 - p. , 2013

Link: https://doi.org/10.1063/..