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Masuya, Satoshi
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1

Two Approaches to Estimate the Shapley Value for Convex Par..:

Masuya, Satoshi
Mathematics.  12 (2023)  1 - p. 17 , 2023
Link: https://doi.org/10.3390/..
 
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2

Uniformity improvement of thickness and net donor concentra..:

Lin, Chia-Hung ; Ema, Kentaro ; Masuya, Satoshi...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1005 , 2023
Link: https://doi.org/10.35848..
 
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3

Values for Restricted Games with Externalities:

Albizuri, M. Josune ; Masuya, Satoshi ; Zarzuelo, José M.
Group Decision and Negotiation.  33 (2023)  2 - p. 351-369 , 2023
Link: https://doi.org/10.1007/..
 
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4

Characterization of a value for games under restricted coop..:

Albizuri, M. Josune ; Masuya, Satoshi ; Zarzuelo, José M.
Annals of Operations Research.  318 (2022)  2 - p. 773-785 , 2022
Link: https://doi.org/10.1007/..
 
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5

Stacking faults: Origin of leakage current in halide vapor ..:

Sdoeung, Sayleap ; Sasaki, Kohei ; Masuya, Satoshi...
Applied Physics Letters.  118 (2021)  17 - p. , 2021
Link: https://doi.org/10.1063/..
 
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6

An Approximated Shapley Value for Partially Defined Coopera..:

Masuya, Satoshi
Procedia Computer Science.  192 (2021)  - p. 100-108 , 2021
Link: https://doi.org/10.1016/..
 
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7

The Interval Estimation of the Shapley Value for Partially ..:

, In: Advances in Intelligent Systems and Computing; Mathematical Modeling, Computational Intelligence Techniques and Renewable Energy,
Masuya, Satoshi - p. 331-340 , 2021
Link: https://doi.org/10.1007/..
 
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8

Characterization of crystalline defects in β-Ga2O3 single c..:

Masuya, Satoshi ; Sasaki, Kohei ; Kuramata, Akito...
Japanese Journal of Applied Physics.  58 (2019)  5 - p. 055501 , 2019
Link: https://doi.org/10.7567/..
 
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9

Annealing effect of surface-activated bonded diamond/Si int..:

Liang, Jianbo ; Zhou, Yan ; Masuya, Satoshi...
Diamond and Related Materials.  93 (2019)  - p. 187-192 , 2019
Link: https://doi.org/10.1016/..
 
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10

Dislocations in chemical vapor deposition (111) single crys..:

Masuya, Satoshi ; Kasu, Makoto
Diamond and Related Materials.  90 (2018)  - p. 40-46 , 2018
Link: https://doi.org/10.1016/..
 
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11

Stability of diamond/Si bonding interface during device fab..:

Liang, Jianbo ; Masuya, Satoshi ; Kim, Seongwoo...
Applied Physics Express.  12 (2018)  1 - p. 016501 , 2018
Link: https://doi.org/10.7567/..
 
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12

Determination of partial dislocations of stacking fault in ..:

Masuya, Satoshi ; Hanada, Kenji ; Moribayashi, Tomoya..
Journal of Crystal Growth.  468 (2017)  - p. 439-442 , 2017
Link: https://doi.org/10.1016/..
 
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13

Diamond Schottky Barrier Diodes With NO2Exposed Surface and..:

Oishi, Toshiyuki ; Kawano, Naoto ; Masuya, Satoshi.
IEEE Electron Device Letters.  38 (2017)  1 - p. 87-90 , 2017
Link: https://doi.org/10.1109/..
 
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14

Realization of direct bonding of single crystal diamond and..:

Liang, Jianbo ; Masuya, Satoshi ; Kasu, Makoto.
Applied Physics Letters.  110 (2017)  11 - p. , 2017
Link: https://doi.org/10.1063/..
 
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15

Formation of stacking fault and dislocation behavior during..:

Masuya, Satoshi ; Hanada, Kenji ; Oshima, Takayoshi..
Diamond and Related Materials.  75 (2017)  - p. 155-160 , 2017
Link: https://doi.org/10.1016/..
 
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