E-LIB Suche - Ergebnisse für: Meese, J.M.

1

Growth and characterization of phosphorus doped diamond fil..:

Roychoudhury, Rajat ; Charlson, E. J. ; Stacy, T....
Journal of Applied Physics. 81 (1997) 8 - p. 3644-3646 , 1997

Link: https://doi.org/10.1063/..

2

Normally on GaAs/AlAs multiple-quantum well Fabry–Perot tra..:

Lin, Chih-Hsiang ; Goossen, K. W. ; Sadra, K...
Applied Physics Letters. 66 (1995) 10 - p. 1222-1224 , 1995

Link: https://doi.org/10.1063/..

3

Optical properties of GaAs/AlxGa1−xAs multiple quantum well..:

Lin, Chih-Hsiang ; Meese, J. M. ; Chang, Yia-Chung
Journal of Applied Physics. 75 (1994) 5 - p. 2618-2627 , 1994

Link: https://doi.org/10.1063/..

4

Smooth diamond films grown by hot filament chemical vapor d..:

Chao, C.H. ; Popovici, G. ; Charlson, E.J....
Journal of Crystal Growth. 140 (1994) 3-4 - p. 454-458 , 1994

Link: https://doi.org/10.1016/..

5

Normally-on GaAs/AlAs multiple-quantum-well Fabry–Perot ref..:

Lin, Chih-Hsiang ; Goossen, K. W. ; Sadra, K..
Applied Physics Letters. 65 (1994) 10 - p. 1242-1244 , 1994

Link: https://doi.org/10.1063/..

6

Plasma etched polycrystalline hot-filament chemical vapor d..:

Liaw, B. Y. ; Stacy, T. ; Zhao, G....
Applied Physics Letters. 65 (1994) 22 - p. 2827-2829 , 1994

Link: https://doi.org/10.1063/..

7

High quantum efficiency for Pt2Si Schottky-barrier diodes i..:

Hajsaid, M. ; Charlson, E. J. ; Charlson, E. M....
Journal of Applied Physics. 75 (1994) 11 - p. 7588-7590 , 1994

Link: https://doi.org/10.1063/..

8

Rectifying contact formation with indium on polycrystalline..:

Stacy, T. ; Zhao, G. ; Liaw, B. Y....
Journal of Applied Physics. 74 (1993) 1 - p. 763-765 , 1993

Link: https://doi.org/10.1063/..

9

Effect of mechanical stress on current-voltage characterist..:

Zhao, G. ; Charlson, E. M. ; Charlson, E. J....
Journal of Applied Physics. 73 (1993) 4 - p. 1832-1837 , 1993

Link: https://doi.org/10.1063/..

10

Optical properties of bulk AlxGa1−xAs:

Lin, Chih-Hsiang ; Meese, J. M.
Journal of Applied Physics. 74 (1993) 10 - p. 6341-6348 , 1993

Link: https://doi.org/10.1063/..

11

Pressure studies of impurity levels in AlxGa1-xAs:

Roach, W P ; Chandrasekhar, M ; Chandrasekhar, H R..
Semiconductor Science and Technology. 4 (1989) 4 - p. 290-292 , 1989

Link: https://doi.org/10.1088/..

12

Interface formation and thermal stability of Sn overlayers ..:

Niles, David W. ; Höchst, Hartmut ; Zajac, G. W....
Journal of Applied Physics. 65 (1989) 2 - p. 662-667 , 1989

Link: https://doi.org/10.1063/..

13

Quantum wells and deep impurity levels under hydrostatic pr..:

Chandrasekhar, Meera ; Chandrasekhar, H.R. ; Kangarlu, A....
Superlattices and Microstructures. 4 (1988) 1 - p. 107-114 , 1988

Link: https://doi.org/10.1016/..

14

High pressure study of GaAsAlxGa1−xAs quantum wells at low..:

Venkateswaran, U. ; Chandrasekhar, M. ; Chandrasekhar, H.R....
Superlattices and Microstructures. 3 (1987) 3 - p. 217-223 , 1987

Link: https://doi.org/10.1016/..

15

Piezomodulated electronic spectra of semiconductor heterost..:

Lee, Y. R. ; Ramdas, A. K. ; Chambers, F. A...
Applied Physics Letters. 50 (1987) 10 - p. 600-602 , 1987

Link: https://doi.org/10.1063/..