E-LIB Suche - Ergebnisse für: Mehandru, R. ( author )

1

AlGaN/GaN HEMT based liquid sensors:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ) ; Mehandru, R. ( author ) ; Luo, B. ( author )...
Solid State Electronics. , 2004

Link: https://doi.org/10.1016/..

2

Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ) ; Luo, B. ( author ) ; Mehandru, R. ( author )...
Solid State Electronics. , 2004

Link: https://doi.org/10.1016/..

3

Effect of deposition conditions and annealing on W Schottky..:

Department of Chemical Engineering, University of Florida, Gainesville, FL-32601, USA ( host institution ) ; Mehandru, R ( author ) ; Kang, S ( author )...
Materials Science in Semiconductor Processing. , 2004

Link: https://doi.org/10.1016/..

4

Improved dc and power performance of AlGaN/GaN high electro..:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ) ; Luo, B. ( author ) ; Mehandru, R. ( author )...
Solid State Electronics. , 2003

Link: https://doi.org/10.1016/..

5

Thermal simulations of high power, bulk GaN rectifiers:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA ( host institution ) ; Mehandru, R. ( author ) ; Kim, S. ( author )...
Solid State Electronics. , 2003

Link: https://doi.org/10.1016/..

6

Comparison of ohmic contact properties on n-GaN/p-SiC and n..:

Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Luo, B ( author ) ; Kim, J ( author )...
Solid State Electronics. , 2002

Link: https://doi.org/10.1016/..

7

Finite difference analysis of thermal characteristics of CW..:

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville FL 32611, USA ( host institution ) ; Mehandru, R. ( author ) ; Dang, G. ( author )...
Solid State Electronics. , 2002

Link: https://doi.org/10.1016/..

8

The role of cleaning conditions and epitaxial layer structu..:

Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA ( host institution ) ; Luo, B ( author ) ; Mehandru, R.M ( author )...
Solid State Electronics. , 2002

Link: https://doi.org/10.1016/..

9

Process Innovations for Future Technology Nodes with Back-S..:

, In: 2023 International Electron Devices Meeting (IEDM),

Kobrinsky, M. ; Silva, J. D ; Mannebach, E.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

10

Novel Cell Architectures with Back-side Transistor Contacts..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Kobrinsky, M. ; Silva, J. D ; Mannebach, E.... - p. 1-2 , 2023

Link: https://doi.org/10.23919..

11

Process modeling for advanced device technologies:

Cea, S. M. ; Botelho, S. ; Chaudhry, A....
Journal of Computational Electronics. 13 (2013) 1 - p. 18-32 , 2013

Link: https://doi.org/10.1007/..

12

Small signal measurement of Sc2O3 AlGaN/GaN moshemts:

Luo, B. ; Mehandru, R. ; Kang, B.S....
Solid-State Electronics. 48 (2004) 2 - p. 355-358 , 2004

Link: https://doi.org/10.1016/..

13

Effect of deposition conditions and annealing on W Schottky..:

Mehandru, R ; Kang, S ; Kim, S...
Materials Science in Semiconductor Processing. 7 (2004) 1-2 - p. 95-98 , 2004

Link: https://doi.org/10.1016/..

14

Hydrogen-induced reversible changes in drain current in Sc2..:

Kang, B. S. ; Mehandru, R. ; Kim, S....
Applied Physics Letters. 84 (2004) 23 - p. 4635-4637 , 2004

Link: https://doi.org/10.1063/..

15

AlGaN/GaN metal–oxide–semiconductor high electron mobility ..:

Mehandru, R. ; Luo, B. ; Kim, J....
Applied Physics Letters. 82 (2003) 15 - p. 2530-2532 , 2003

Link: https://doi.org/10.1063/..