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Menezla, R
9  Ergebnisse:
Personensuche X
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1

Two-dimensional simulation of the effects of grain boundari..:

Amrani, M ; Benamara, Z ; Menezla, R...
Journal of Physics D: Applied Physics.  38 (2005)  4 - p. 596-603 , 2005
Link: https://doi.org/10.1088/..
 
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2

Experimental analysis and 2D-simulation of C–V characterist..:

Amrani, M. ; Benseddik, N. ; Benamara, Z....
Materials Science and Engineering: B.  121 (2005)  1-2 - p. 71-76 , 2005
Link: https://doi.org/10.1016/..
 
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3

Study of lateral polysilicon PN diodes C–V characteristics:..:

Amrani, M ; Sehil, H ; Menezla, R..
Solid-State Electronics.  42 (1998)  11 - p. 1925-1931 , 1998
Link: https://doi.org/10.1016/..
 
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4

Characterization of the polysilicon thin film transistors e..:

Sehil, H. ; Rahmani, N.M. ; Pichon, L....
Synthetic Metals.  90 (1997)  3 - p. 181-185 , 1997
Link: https://doi.org/10.1016/..
 
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5

Simulation of the high frequency C–V characteristics of lat..:

Amrani, M ; Menezla, R ; Sehil, H...
Materials Science and Engineering: B.  49 (1997)  3 - p. 197-201 , 1997
Link: https://doi.org/10.1016/..
 
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6

Simulating and modeling the breakdown voltage in a semi-ins..:

Resfa, A. ; Menezla, Brahimi R. ; Benchhima, M.
Journal of Semiconductors.  35 (2014)  8 - p. 084002 , 2014
Link: https://doi.org/10.1088/..
 
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7

Study and modeling of the breakdown voltage in semi insulat..:

Resfa, A. ; Menezla, Brahimi R. ; Bougueneya, Mustapha
Superlattices and Microstructures.  72 (2014)  - p. 352-369 , 2014
Link: https://doi.org/10.1016/..
 
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8

Study and modeling of the transport mechanism in a semi ins..:

Resfa, A. ; Smahi, Bourzig Y. ; Menezla, Brahimi.R.
Superlattices and Microstructures.  52 (2012)  3 - p. 364-375 , 2012
Link: https://doi.org/10.1016/..
 
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9

Study and modeling of the transport mechanism in a Schottky..:

Resfa, A. ; Smahi, Bourzig Y ; Menezla, Brahimi R
Journal of Semiconductors.  32 (2011)  12 - p. 124001 , 2011
Link: https://doi.org/10.1088/..
 
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