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Meunier-Beillard, P
69  Ergebnisse:
Personensuche X
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1

Quantitative prediction of junction leakage in bulk-technol..:

Duffy, R. ; Heringa, A. ; Venezia, V.C....
Solid-State Electronics.  54 (2010)  3 - p. 243-251 , 2010
Link: https://doi.org/10.1016/..
 
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2

Si interstitial contribution of F+ implants in crystalline ..:

López, Pedro ; Pelaz, Lourdes ; Duffy, R....
Journal of Applied Physics.  103 (2008)  9 - p. , 2008
Link: https://doi.org/10.1063/..
 
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3

A Novel Isolation Scheme featuring Cavities in the Collecto..:

, In: 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
Choi, L.J. ; Leray, P. ; Vleugels, F.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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4

A Novel Fully Self-Aligned SiGe:C HBT Architecture Featurin..:

, In: 2007 IEEE International Electron Devices Meeting,
Donkers, J.J.T.M. ; Vanhoucke, T. ; Vleugels, F.... - p. None , 2007
Link: https://doi.org/10.1109/..
 
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5

Selective epitaxial deposition of strained silicon: a simpl..:

Delhougne, R. ; Eneman, G. ; Caymax, M....
Solid-State Electronics.  48 (2004)  8 - p. 1307-1316 , 2004
Link: https://doi.org/10.1016/..
 
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6

N2 as carrier gas: an alternative to H2 for enhanced epitax..:

Meunier-Beillard, P ; Caymax, M ; Van Nieuwenhuysen, K...
Applied Surface Science.  224 (2004)  1-4 - p. 31-35 , 2004
Link: https://doi.org/10.1016/..
 
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7

Structural and optical properties of Ge islands grown in an..:

Loo, R. ; Meunier-Beillard, P. ; Vanhaeren, D....
Journal of Applied Physics.  90 (2001)  5 - p. 2565-2574 , 2001
Link: https://doi.org/10.1063/..
 
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8

Recent results on the optical properties of LuAlO3:Ce scint..:

Dujardin, C. ; Pedrini, C. ; Meunier-Beillard, P....
Journal of Luminescence.  72-74 (1997)  - p. 759-761 , 1997
Link: https://doi.org/10.1016/..
 
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9

Quantitative prediction of junction leakage in bulk-technol..:

Duffy, R ; Heringa, A ; Venezia, VC...
ISSN:0038-1101.  , 2010
Link: http://repository.tue.nl..
 
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10

Si interstitial contribution of F+ implants in crystalline ..:

López, Pedro ; Pelaz, L ; Duffy, R...
ISSN:0021-8979.  , 2008
Link: http://repository.tue.nl..
 
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11

Si interstitial contribution of F+ implants in crystalline ..:

López, Pedro ; Pelaz, L ; Duffy, R...
López , P , Pelaz , L , Duffy , R , Meunier-Beillard , P , Roozeboom , F , Tak, van der , K , Breimer , P , Berkum, van , J G M , Verheijen , M A & Kaiser , M 2008 , ' Si interstitial contribution of F+ implants in crystalline Si ' , Journal of Applied Physics , vol. 103 , no. 9 , 093538 . https://doi.org/10.1063/1.2917297.  , 2008
Link: https://research.tue.nl/..
 
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12

Evolution of fluorine and boron profiles during annealing i..:

López, Pedro ; Pelaz, L ; Duffy, R...
ISSN:1071-1023.  , 2008
Link: http://repository.tue.nl..
 
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13

Evolution of fluorine and boron profiles during annealing i..:

López, Pedro ; Pelaz, L ; Duffy, R...
López , P , Pelaz , L , Duffy , R , Meunier-Beillard , P , Roozeboom , F , Tak, van der , K , Breimer , P , Berkum, van , J G M , Verheijen , M A & Kaiser , M 2008 , ' Evolution of fluorine and boron profiles during annealing in crystalline Si ' , Journal of Vacuum Science and Technology, B , vol. 26 , no. 1 , pp. 377-381 . https://doi.org/10.1116/1.2794738.  , 2008
Link: https://research.tue.nl/..
 
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14

Fluorine profile distortion upon annealing by the presence ..:

López, Pedro ; Pelaz, Lourdes ; Duffy, R... , 2006
Link: http://repository.tue.nl..
 
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15

Diffusion suppression in silicon by substitutional C doping:

Cowern, N E B ; Colombeau, B ; Roozeboom, F Fred... , 2002
Link: http://repository.tue.nl..
 
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