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Miyamura, Yoshiji
40  Ergebnisse:
Personensuche X
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1

Study on stress in trench structures during silicon IGBTs p..:

Cai, Bozhou ; Yuan, Jiuyang ; Miyamura, Yoshiji..
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP16 , 2024
Link: https://doi.org/10.35848..
 
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2

The Study of Dislocation Propagation in Si Wafer during IGB..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Yuan, Jiuyang ; Miyamura, Yoshiji ; Nakano, Satoshi.. - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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3

3D Numerical Analysis of the Asymmetric Three-Phase Line of..:

Han, Xue-Feng ; Liu, Xin ; Nakano, Satoshi...
Crystals.  10 (2020)  2 - p. 121 , 2020
Link: https://doi.org/10.3390/..
 
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4

3D numerical study of the asymmetric phenomenon in 200 mm f..:

Han, Xue-Feng ; Liu, Xin ; Nakano, Satoshi...
Journal of Crystal Growth.  532 (2020)  - p. 125403 , 2020
Link: https://doi.org/10.1016/..
 
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5

Transient global modeling for the pulling process of Czochr..:

Liu, Xin ; Harada, Hirofumi ; Miyamura, Yoshiji...
Journal of Crystal Growth.  532 (2020)  - p. 125405 , 2020
Link: https://doi.org/10.1016/..
 
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6

Transient global modeling for the pulling process of Czochr..:

Liu, Xin ; Harada, Hirofumi ; Miyamura, Yoshiji...
Journal of Crystal Growth.  532 (2020)  - p. 125404 , 2020
Link: https://doi.org/10.1016/..
 
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7

Numerical analyses and experimental validations on transpor..:

Liu, Xin ; Harada, Hirofumi ; Miyamura, Yoshiji...
Journal of Crystal Growth.  499 (2018)  - p. 8-12 , 2018
Link: https://doi.org/10.1016/..
 
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8

Effect of oxygen on dislocation multiplication in silicon c..:

Fukushima, Wataru ; Harada, Hirofumi ; Miyamura, Yoshiji...
Journal of Crystal Growth.  486 (2018)  - p. 45-49 , 2018
Link: https://doi.org/10.1016/..
 
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9

Determination of C concentration in P-doped n-type Czochral..:

Ishikawa, Yoichiro ; Tajima, Michio ; Kiuchi, Hirotatsu...
Japanese Journal of Applied Physics.  57 (2018)  8S3 - p. 08RB06 , 2018
Link: https://doi.org/10.7567/..
 
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10

3D Global Heat Transfer Model on Floating Zone for Silicon ..:

Han, Xue-Feng ; Liu, Xin ; Nakano, Satoshi...
Crystal Research and Technology.  53 (2018)  5 - p. 1700246 , 2018
Link: https://doi.org/10.1002/..
 
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11

3D numerical simulation of free surface shape during the cr..:

Han, Xue-Feng ; Liu, Xin ; Nakano, Satoshi...
Journal of Crystal Growth.  483 (2018)  - p. 269-274 , 2018
Link: https://doi.org/10.1016/..
 
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12

Relationship between Dislocation Density and Oxygen Concent..:

Ide, Tomoro ; Harada, Hirofumi ; Miyamura, Yoshiji...
Crystals.  8 (2018)  6 - p. 244 , 2018
Link: https://doi.org/10.3390/..
 
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13

Silicon bulk growth for solar cells: Science and technology:

Kakimoto, Koichi ; Gao, Bing ; Nakano, Satoshi..
Japanese Journal of Applied Physics.  56 (2017)  2 - p. 020101 , 2017
Link: https://doi.org/10.7567/..
 
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14

Dislocation behavior in seed‐cast grown Si ingots based on ..:

Jiptner, Karolin ; Miyamura, Yoshiji ; Harada, Hirofumi...
Progress in Photovoltaics: Research and Applications.  24 (2015)  12 - p. 1513-1522 , 2015
Link: https://doi.org/10.1002/..
 
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15

Single-Seed Casting Large-Size Monocrystalline Silicon for ..:

Gao, Bing ; Nakano, Satoshi ; Harada, Hirofumi...
Engineering.  1 (2015)  3 - p. 378-383 , 2015
Link: https://doi.org/10.15302..
 
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