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X
Moens, P.
639  Ergebnisse:
Personensuche X
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1

On the Intrinsic and Extrinsic Reliability Challenges of Si..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Moens, P. ; Geenen, F. ; Avramenko, M... - p. 1-7 , 2024
Link: https://doi.org/10.1109/..
 
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2

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Avramenko, M. ; De Schepper, L. ; Cano, J.-F.... - p. P54.SiC-1-P54.SiC-4 , 2024
Link: https://doi.org/10.1109/..
 
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3

Charge Trapping in SiC MOSFETs under Constant Gate Current ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Marcuzzi, A. ; Avramenko, M. ; De Santi, C.... - p. 1-5 , 2024
Link: https://doi.org/10.1109/..
 
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4

Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Cap..:

Marcuzzi, A. ; Avramenko, M. ; De Santi, C....
Materials Science in Semiconductor Processing.  177 (2024)  - p. 108389 , 2024
Link: https://doi.org/10.1016/..
 
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5

The Concept of Safe Operating Area for Gate Dielectrics: th..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Moens, P. ; Geenen, F. ; De Schepper, L.... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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6

Transient Overvoltage Detection Technique for GaN HEMTs Int..:

, In: 2022 IEEE Applied Power Electronics Conference and Exposition (APEC),
Murray, S. K. ; Jiang, W. L. ; Zaman, M. S.... - p. 1400-1405 , 2022
Link: https://doi.org/10.1109/..
 
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7

Cryogenic-temperature investigation of negative bias stress..:

Masin, F. ; De Santi, C. ; Lettens, J....
Microelectronics Reliability.  138 (2022)  - p. 114720 , 2022
Link: https://doi.org/10.1016/..
 
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8

Non-monotonic threshold voltage variation in 4H-SiC metal–o..:

Masin, F. ; De Santi, C. ; Lettens, J....
Journal of Applied Physics.  130 (2021)  14 - p. , 2021
Link: https://doi.org/10.1063/..
 
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9

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Un..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Masin, F. ; Meneghini, M. ; Canato, E.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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10

OFF-state trapping phenomena in GaN HEMTs: Interplay betwee..:

Canato, E. ; Meneghini, M. ; De Santi, C....
Microelectronics Reliability.  114 (2020)  - p. 113841 , 2020
Link: https://doi.org/10.1016/..
 
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11

GaN PMIC Opportunities: Characterization of Analog and Digi..:

, In: 2020 IEEE Symposium on VLSI Technology,
Jiang, W. L. ; Zaman, M. S. ; Murray, S. K.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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12

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Life..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Moens, P. ; Franchi, J. ; Lettens, J.... - p. 78-81 , 2020
Link: https://doi.org/10.1109/..
 
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13

Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si P..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zaman, M. S. ; Jiang, W. L. ; Murray, S.... - p. 26-29 , 2020
Link: https://doi.org/10.1109/..
 
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14

Differential Variable Base Charge Pumping ($\Delta-\text{CP..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Moens, P. ; Constant, A. ; Stockman, A... - p. 163-166 , 2019
Link: https://doi.org/10.1109/..
 
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15

ESD-failure of E-mode GaN HEMTs: Role of device geometry an..:

Canato, E. ; Meneghini, M. ; Nardo, A....
Microelectronics Reliability.  100-101 (2019)  - p. 113334 , 2019
Link: https://doi.org/10.1016/..
 
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