E-LIB Suche - Ergebnisse für: Mollah, Shahab

1

Realization of flexible AlGaN/GaN HEMT by laser liftoff:

Alam, Md Didarul ; Hussain, Kamal ; Mollah, Shahab...
Applied Physics Express. , 2022

Link: https://doi.org/10.35848..

2

Threshold voltage control with high-temperature gate-oxide ..:

Mollah, Shahab ; Hussain, Kamal ; Mamun, Abdullah...
Applied Physics Express. 15 (2022) 10 - p. 104001 , 2022

Link: https://doi.org/10.35848..

3

High-current recessed gate enhancement-mode ultrawide bandg..:

Mollah, Shahab ; Hussain, Kamal ; Mamun, Abdullah...
Applied Physics Express. 14 (2021) 1 - p. 014003 , 2021

Link: https://doi.org/10.35848..

4

Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices w..:

Hanus, Riley ; Rangnekar, Sonal V. ; Mollah, Shahab...
ACS Applied Materials & Interfaces. 13 (2021) 35 - p. 42195-42204 , 2021

Link: https://doi.org/10.1021/..

5

High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlG..:

Xue, Hao ; Hussain, Kamal ; Talesara, Vishank...
physica status solidi (RRL) – Rapid Research Letters. 15 (2021) 6 - p. , 2021

Link: https://doi.org/10.1002/..

6

Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat ..:

Alam, Md Didarul ; Gaevski, Mikhail ; Jewel, Mohi Uddin...
Applied Physics Letters. 119 (2021) 13 - p. , 2021

Link: https://doi.org/10.1063/..

7

High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel M..:

Mollah, Shahab ; Hussain, Kamal ; Floyd, Richard...
physica status solidi (a). 217 (2020) 7 - p. , 2020

Link: https://doi.org/10.1002/..

8

An opto-thermal study of high brightness 280 nm emission Al..:

Floyd, Richard ; Gaevski, Mikhail ; Alam, Md Didarul...
Applied Physics Express. 14 (2020) 1 - p. 014002 , 2020

Link: https://doi.org/10.35848..

9

Temperature characteristics of high-current UWBG enhancemen..:

Mollah, Shahab ; Gaevski, Mikhail ; Hussain, Kamal...
Applied Physics Letters. 117 (2020) 23 - p. , 2020

Link: https://doi.org/10.1063/..

10

Ultrawide bandgap Al x Ga1–x N channel heterostructure fiel..:

Gaevski, Mikhail ; Mollah, Shahab ; Hussain, Kamal...
Applied Physics Express. 13 (2020) 9 - p. 094002 , 2020

Link: https://doi.org/10.35848..

11

Ultra-wide bandgap AlGaN metal oxide semiconductor heterost..:

Mollah, Shahab ; Gaevski, Mikhail ; Chandrashekhar, MVS...
Semiconductor Science and Technology. 34 (2019) 12 - p. 125001 , 2019

Link: https://doi.org/10.1088/..

12

Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al..:

Jewel, Mohi Uddin ; Alam, Md Didarul ; Mollah, Shahab...
Applied Physics Letters. 115 (2019) 21 - p. , 2019

Link: https://doi.org/10.1063/..

13

Publisher's Note: "Trap characterization in ultra-wide band..:

Jewel, Mohi Uddin ; Alam, Md Didarul ; Mollah, Shahab...
Applied Physics Letters. 115 (2019) 24 - p. , 2019

Link: https://doi.org/10.1063/..

14

Current collapse in high-Al channel AlGaN HFETs:

Mollah, Shahab ; Gaevski, Mikhail ; Hussain, Kamal...
Applied Physics Express. 12 (2019) 7 - p. 074001 , 2019

Link: https://doi.org/10.7567/..

15

(Invited) Transition Metal Dichalcogenide Semiconductor Gro..:

Garg, Sourav ; Mollah, Abu Shahab ; Waters, Joseph L..
ECS Transactions. 80 (2017) 6 - p. 1-11 , 2017

Link: https://doi.org/10.1149/..