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Morioka, Ayuka
15  Ergebnisse:
Personensuche X
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1

Spectroscopy of flux-driven Kerr parametric oscillators by ..:

Yamaguchi, Aiko ; Masuda, Shumpei ; Matsuzaki, Yuichiro...
New Journal of Physics.  26 (2024)  4 - p. 043019 , 2024
Link: https://doi.org/10.1088/..
 
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2

An atom-switch-based field-programmable gate array with opt..:

Bai, Xu ; Miyamura, Makoto ; Nebashi, Ryusuke...
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBB04 , 2019
Link: https://doi.org/10.7567/..
 
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3

Architecture optimization of nanobridge-based field-program..:

Bai, Xu ; Sakamoto, Toshitsugu ; Tsuji, Yukihide...
Japanese Journal of Applied Physics.  56 (2017)  4S - p. 04CF03 , 2017
Link: https://doi.org/10.7567/..
 
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4

NanoBridge-Based FPGA in High-Temperature Environments:

Miyamura, Makoto ; Sakamoto, Toshitsugu ; Bai, Xu...
IEEE Micro.  37 (2017)  5 - p. 32-42 , 2017
Link: https://doi.org/10.1109/..
 
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5

Area-efficient nonvolatile carry chain based on pass-transi..:

Bai, Xu ; Tsuji, Yukihide ; Sakamoto, Toshitsugu...
Japanese Journal of Applied Physics.  55 (2016)  4S - p. 04EF01 , 2016
Link: https://doi.org/10.7567/..
 
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6

Architecture of Reconfigurable-Logic Cell Array with Atom S..:

, In: Proceedings of the 2015 ACM/SIGDA International Symposium on Field-Programmable Gate Arrays,
Bai, Xu ; Tsuji, Yukihide ; Morioka, Ayuka... - p. 269 ff. , 2015
Link: https://dl.acm.org/doi/1..
 
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7

1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node M..:

Saitoh, Motofumi ; Terai, Masayuki ; Ikarashi, Nobuyuki...
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2330 , 2005
Link: https://doi.org/10.1143/..
 
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8

Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielect..:

Manabe, Kenzo ; Takahashi, Kensuke ; Ikarashi, Taeko...
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2205 , 2005
Link: https://doi.org/10.1143/..
 
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9

Influence of Charge Traps within HfSiON Bulk on Positive an..:

Fujieda, Shinji ; Kotsuji, Setsu ; Morioka, Ayuka..
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2385 , 2005
Link: https://doi.org/10.1143/..
 
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10

High-Mobility Dual Metal Gate MOS Transistors with High-k G..:

Takahashi, Kensuke ; Manabe, Kenzo ; Morioka, Ayuka...
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2210 , 2005
Link: https://doi.org/10.1143/..
 
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11

Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node..:

Terai, Masayuki ; Yabe, Yuko ; Fujieda, Shinji...
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2441 , 2005
Link: https://doi.org/10.1143/..
 
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12

High mobility MISFET with low trapped charge in HfSiO films:

, In: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407),
Morioka, Ayuka ; Watanabe, Hirohito ; Miyamura, Makoto... - p. 165,166 , 2003
Link: https://doi.org/10.1109/..
 
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13

A highly manufacturable low power and high speed HfSiO CMOS..:

, In: IEEE International Electron Devices Meeting 2003,
Iwamoto, Toshiyuki ; Ogura, Takashi ; Terai, Masayuki... - p. 27.5.1-27.5.4 , 2003
Link: https://doi.org/10.1109/..
 
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14

Low-Temperature and Low-Activation-Energy Process for the G..:

Ueno, Tomo ; Morioka, Ayuka ; Chikamura, Shingo.
Japanese Journal of Applied Physics.  39 (2000)  4B - p. L327 , 2000
Link: https://doi.org/10.1143/..
 
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15

Spectroscopy of flux-driven Kerr parametric oscillators by ..:

Yamaguchi, Aiko ; Masuda, Shumpei ; Matsuzaki, Yuichiro...
http://arxiv.org/abs/2309.10488.  , 2023
Link: http://arxiv.org/abs/230..
 
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