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Moselund, K.
28  Ergebnisse:
Personensuche X
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1

Spectral Control of Coupled InP Nanolasers Around Exception..:

, In: 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC),
Fischer, A. ; Raziman, T.V. ; Dranczewski, J.... - p. 1-1 , 2023
Link: https://doi.org/10.1109/..
 
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2

Template-assisted selective epitaxy for III-V vertical nano..:

, In: 2019 Compound Semiconductor Week (CSW),
Trivino, Noelia Vico ; Staudinger, P. ; Bologna, N.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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3

Template-assisted selective epitaxy of III–V nanoscale devi..:

Schmid, H. ; Borg, M. ; Moselund, K....
Applied Physics Letters.  106 (2015)  23 - p. , 2015
Link: https://doi.org/10.1063/..
 
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4

III-V semiconductor nanowires for future devices:

, In: Proceedings of the conference on Design, Automation & Test in Europe,
Schmid, H. ; Borg, B. M. ; Moselund, K.... - p. 1-2 , 2014
Link: https://dl.acm.org/doi/1..
 
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5

III-V semiconductor nanowires for future devices:

, In: 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE),
Schmid, H. ; Borg, B. M. ; Moselund, K.... - p. 1-2 , 2014
Link: https://doi.org/10.7873/..
 
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6

Monolithic integration of III-V photodiodes and emitters on..:

, In: 49th European Conference on Optical Communications (ECOC 2023),
Oliver Martinez, C. ; Scherrer, M. ; Iadanza, S.... - p. None , 2023
Link: https://doi.org/10.1049/..
 
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7

III-V-on-Si transistor technologies: Performance boosters a..:

Caimi, D. ; Schmid, H. ; Morf, T....
Solid-State Electronics.  185 (2021)  - p. 108077 , 2021
Link: https://doi.org/10.1016/..
 
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8

Scaled III-V optoelectronic devices on silicon:

, In: 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD),
Tiwari, P. ; Mauthe, S. ; Trivino, N. Vico... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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9

In-plane monolithic integration of scaled III-V photonic de..:

, In: 2020 European Conference on Optical Communications (ECOC),
Trivino, N. Vico ; Mauthe, S. ; Scherrer, M.... - p. 1-3 , 2020
Link: https://doi.org/10.1109/..
 
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10

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transisto..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Convertino, C. ; Zota, C. B. ; Baumgartner, Y.... - p. 37.1.1-37.1.4 , 2019
Link: https://doi.org/10.1109/..
 
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11

III–V heterostructure tunnel field-effect transistor:

Convertino, C ; Zota, C B ; Schmid, H..
Journal of Physics: Condensed Matter.  30 (2018)  26 - p. 264005 , 2018
Link: https://doi.org/10.1088/..
 
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12

III-V heterojunction nanowire tunnel FETs monolithically in..:

, In: 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Moselund, K. E. ; Cutaia, D. ; Schmid, H.... - p. 1-2 , 2016
Link: https://doi.org/10.1109/..
 
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13

Si–InAs heterojunction Esaki tunnel diodes with high curren..:

Björk, M. T. ; Schmid, H. ; Bessire, C. D....
Applied Physics Letters.  97 (2010)  16 - p. , 2010
Link: https://doi.org/10.1063/..
 
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14

Prospects for logic-on-a-wire:

Moselund, K.E. ; Bouvet, D. ; Ben Jamaa, M.H....
Microelectronic Engineering.  85 (2008)  5-6 - p. 1406-1409 , 2008
Link: https://doi.org/10.1016/..
 
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15

Punch-through impact ionization MOSFET (PIMOS): From device..:

Moselund, K.E. ; Bouvet, D. ; Pott, V....
Solid-State Electronics.  52 (2008)  9 - p. 1336-1344 , 2008
Link: https://doi.org/10.1016/..
 
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