E-LIB Suche - Ergebnisse für: Mun, Jae Kyoung

1

β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Volt..:

Cho, Kyu Jun ; Chang, Woojin ; Lee, Hoon-Ki.
Transactions on Electrical and Electronic Materials. , 2024

Link: https://doi.org/10.1007/..

2

Enhancing the thermal stability of active contacts in AlGaN..:

Choi, Kyeong-Keun ; Kim, Youn-Jang ; Kim, Su Kon.
Current Applied Physics. 67 (2024) - p. 69-74 , 2024

Link: https://doi.org/10.1016/..

3

Thermal analysis of anα-Ga2O3 MOSFET using micro-Raman spec..:

Karim, Anwarul ; Song, Yiwen ; Shoemaker, Daniel C....
Applied Physics Letters. 123 (2023) 19 - p. , 2023

Link: https://doi.org/10.1063/..

4

Current Status of Ga2O3 Power Devices in ETRI:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Mun, Jae Kyoung ; Ryou, Heejoong ; Cho, Kyu Jun.. - p. 253-255 , 2022

Link: https://doi.org/10.1109/..

5

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga2O3 M..:

Mun, Jae Kyoung ; Cho, Kyujun ; Chang, Woojin..
ECS Journal of Solid State Science and Technology. 8 (2019) 7 - p. Q3079-Q3082 , 2019

Link: https://doi.org/10.1149/..

6

Integrated microHall magnetometer to measure the magnetic p..:

Min, Changwook ; Park, Jongmin ; Mun, Jae Kyoung...
Lab on a Chip. 17 (2017) 23 - p. 4000-4007 , 2017

Link: https://doi.org/10.1039/..

7

Improved stability of electrical properties of nitrogen-add..:

Lee, Da Jung ; Lim, Jung Wook ; Mun, Jae Kyoung.
Materials Research Bulletin. 83 (2016) - p. 597-602 , 2016

Link: https://doi.org/10.1016/..

8

Low onset voltage of GaN on Si Schottky barrier diode using..:

Park, Youngrak ; Kim, Jung‐Jin ; Chang, Woojin...
Electronics Letters. 50 (2014) 16 - p. 1164-1165 , 2014

Link: https://doi.org/10.1049/..

9

Micromachined stress-free TSV hole for AlGaN/GaN-on-Si (1 1..:

Ko, Sang Choon ; Min, Byoung-Gue ; Park, Young-Rak...
Journal of Micromechanics and Microengineering. 23 (2013) 3 - p. 035011 , 2013

Link: https://doi.org/10.1088/..

10

Degradation of d.c. parameters in enhancement mode WNx self..:

Mun, Jae Kyoung ; Lim, Jong Won ; Lee, Jae Jin.
Microelectronics Reliability. 39 (1999) 12 - p. 1793-1800 , 1999

Link: https://doi.org/10.1016/..

11

A new self-aligned and T-shaped gate technology for GaAs po..:

Lee, Jong-Lam ; Mun, Jae Kyoung ; Kim, Haecheon
Solid-State Electronics. 42 (1998) 11 - p. 2063-2068 , 1998

Link: https://doi.org/10.1016/..

12

Degradation mechanism of GaAs MESFETs:

Mun, Jae Kyoung ; Lee, Jong-Lam ; Kim, Haecheon...
Microelectronics Reliability. 38 (1998) 1 - p. 171-178 , 1998

Link: https://doi.org/10.1016/..

13

Thermal degradation mechanism of Ti/Pt/Au Schottky contact ..:

Lee, Jong-Lam ; Mun, Jae Kyoung ; Lee, Byung-Teak
Journal of Applied Physics. 82 (1997) 10 - p. 5011-5016 , 1997

Link: https://doi.org/10.1063/..

14

Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic hi..:

Kim, Yi-Tae ; Lee, Jong-Lam ; Mun, Jae Kyoung.
Applied Physics Letters. 71 (1997) 18 - p. 2656-2658 , 1997

Link: https://doi.org/10.1063/..

15

Control of pn-junction turn-on voltage in 4H-SiC merged PiN..:

Park, Junbo ; Park, Kun-Sik ; Won, Jong-il...
Applied Physics Letters. 110 (2017) 14 - p. , 2017

Link: https://doi.org/10.1063/..