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Murakoshi, Atsushi
54  Ergebnisse:
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1

Reduction in number of crystal defects in a p+Si diffusion ..:

Murakoshi, Atsushi ; Harada, Tsubasa ; Miyano, Kiyotaka...
Japanese Journal of Applied Physics.  56 (2017)  9 - p. 095503 , 2017
Link: https://doi.org/10.7567/..
 
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2

Boron diffusion layer formation using Ge cryogenic implanta..:

Murakoshi, Atsushi ; Harada, Tsubasa ; Miyano, Kiyotaka...
Japanese Journal of Applied Physics.  55 (2016)  4 - p. 046501 , 2016
Link: https://doi.org/10.7567/..
 
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3

Reduction of surface roughness and defect density by cryoge..:

Murakoshi, Atsushi ; Iwase, Masao ; Niiyama, Hiromi..
Japanese Journal of Applied Physics.  53 (2014)  6 - p. 066507 , 2014
Link: https://doi.org/10.7567/..
 
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4

Ultralow Contact Resistivity for a Metal/p-Type Silicon Int..:

Murakoshi, Atsushi ; Iwase, Masao ; Niiyama, Hiromi..
Japanese Journal of Applied Physics.  52 (2013)  7R - p. 075802 , 2013
Link: https://doi.org/10.7567/..
 
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5

Improvement of P–N Junction Leakage and Reduction in Interf..:

Murakoshi, Atsushi ; Iwase, Masao ; Niiyama, Hiromi..
Japanese Journal of Applied Physics.  52 (2013)  10R - p. 105501 , 2013
Link: https://doi.org/10.7567/..
 
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6

Highly Reliable Dynamic Random Access Memory Technology for..:

Sugizaki, Taro ; Murakoshi, Atsushi ; Katsumata, Ryota...
Japanese Journal of Applied Physics.  42 (2003)  Part 1, No. 4B - p. 1870-1873 , 2003
Link: https://doi.org/10.1143/..
 
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7

Systematic Investigation of Leakage Suppression by Pre-Sili..:

Tsuchiaki, Masakatsu ; Murakoshi, Atsushi ; Hongo, Chie
Japanese Journal of Applied Physics.  42 (2003)  Part 1, No. 4B - p. 1847-1854 , 2003
Link: https://doi.org/10.1143/..
 
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8

10–15 nm Ultrashallow Junction Formation by Flash-Lamp Anne..:

Ito, Takayuki ; Iinuma, Toshihiko ; Murakoshi, Atsushi...
Japanese Journal of Applied Physics.  41 (2002)  Part 1, No. 4B - p. 2394-2398 , 2002
Link: https://doi.org/10.1143/..
 
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9

Ultrashallow Junction Formation for Sub-100 nmComplementary..:

Ohuchi, Kazuya ; Adachi, Kanna ; Murakoshi, Atsushi...
Japanese Journal of Applied Physics.  40 (2001)  4S - p. 2701 , 2001
Link: https://doi.org/10.1143/..
 
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10

Dual-Thickness Gate Oxidation Technology with Halogen/Xenon..:

Sugizaki, Taro ; Murakoshi, Atsushi ; Ozawa, Yoshio..
Japanese Journal of Applied Physics.  40 (2001)  4S - p. 2674 , 2001
Link: https://doi.org/10.1143/..
 
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11

Surface Channel Metal Gate Complementary MOS with Light Cou..:

Nishinohara, Kazumi T. ; Akasaka, Yasushi ; Saito, Tomohiro...
Japanese Journal of Applied Physics.  40 (2001)  4S - p. 2603 , 2001
Link: https://doi.org/10.1143/..
 
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12

Improved Ti Self-Aligned Silicide Technology Using High Dos..:

Ohuchi, Kazuya ; Miyashita, Katsura ; Murakoshi, Atsushi...
Japanese Journal of Applied Physics.  38 (1999)  4S - p. 2238 , 1999
Link: https://doi.org/10.1143/..
 
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13

Interfacial Layers between Si and Ru Films Deposited by Spu..:

Aoyama, Tomonori ; Murakoshi, Atsushi ; Koike, Mitsuo..
Japanese Journal of Applied Physics.  37 (1998)  2B - p. L242 , 1998
Link: https://doi.org/10.1143/..
 
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14

Ru Electrode Deposited by Sputtering in Ar/O2 Mixture Ambie..:

Aoyama, Tomonori ; Murakoshi, Atsushi ; Imai, Keitaro
Japanese Journal of Applied Physics.  37 (1998)  10R - p. 5701 , 1998
Link: https://doi.org/10.1143/..
 
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15

Ultra high dose boron ion implantation: super-saturation of..:

Mizushima, Ichiro ; Murakoshi, Atsushi ; Suguro, Kyoichi..
Materials Chemistry and Physics.  54 (1998)  1-3 - p. 54-59 , 1998
Link: https://doi.org/10.1016/..
 
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