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Murashova, S. V.
170  Ergebnisse:
Personensuche X
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1

Facial Recognition Technologies Patent Landscape:

, In: Software Engineering Application in Systems Design; Lecture Notes in Networks and Systems,
Nikolaev, A. S. ; Maximova, T. G. ; Sakhno, I. E... - p. 568-583 , 2023
Link: https://doi.org/10.1007/..
 
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2

Using Patent Analytics in Additive Manufacturing Evaluation..:

, In: Networks and Systems in Cybernetics; Lecture Notes in Networks and Systems,
Somonov, V. V. ; Nikolaev, A. S. ; Murashova, S. V.. - p. 108-121 , 2023
Link: https://doi.org/10.1007/..
 
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3

Mathematical Modeling of Static Elastography:

Muravieva, O. V. ; Murashova, D. S. ; Murashov, S. A..
Biomedical Engineering.  48 (2014)  3 - p. 148-152 , 2014
Link: https://doi.org/10.1007/..
 
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4

High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs het..:

Andreev, A. Yu. ; Zorina, S. A. ; Leshko, A. Yu....
Semiconductors.  43 (2009)  4 - p. 519-523 , 2009
Link: https://doi.org/10.1134/..
 
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5

High-power laser diodes with an emission wavelength of 835 ..:

Murashova, A. V. ; Vinokurov, D. A. ; Pikhtin, N. A....
Semiconductors.  42 (2008)  7 - p. 862-867 , 2008
Link: https://doi.org/10.1134/..
 
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6

High-power single-mode laser diodes (λ = 1.1–1.2 μm) based ..:

Murashova, A. V. ; Pikhtin, N. A. ; Fetisova, N. V....
Technical Physics Letters.  34 (2008)  7 - p. 554-556 , 2008
Link: https://doi.org/10.1134/..
 
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7

High-power laser diodes of wavelength 808 nm based on vario..:

Bezotosnyĭ, V. V. ; Vasil'eva, V. V. ; Vinokurov, D. A....
Semiconductors.  42 (2008)  3 - p. 350-353 , 2008
Link: https://doi.org/10.1134/..
 
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8

High-power laser diodes based on asymmetric separate-confin..:

Vinokurov, D. A. ; Zorina, S. A. ; Kapitonov, V. A....
Semiconductors.  39 (2005)  3 - p. 370-373 , 2005
Link: https://doi.org/10.1134/..
 
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9

Photoluminescence of heterostructures with highly strained ..:

Shamakhov, V. V. ; Vinokurov, D. A. ; Stankevich, A. L....
Technical Physics Letters.  31 (2005)  12 - p. 993-996 , 2005
Link: https://doi.org/10.1134/..
 
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10

Photoluminescence of GaAsP/GaInAsP Type-II heterojunctions:

Vinokurov, D. A. ; Zorina, S. A. ; Kapitonov, V. A....
Technical Physics Letters.  30 (2004)  12 - p. 1033-1035 , 2004
Link: https://doi.org/10.1134/..
 
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11

Optical and structural properties of ingaasp miscibility-ga..:

Vavilova, L. S. ; Vinokurov, D. A. ; Kapitonov, V. A....
Semiconductors.  37 (2003)  9 - p. 1080-1084 , 2003
Link: https://doi.org/10.1134/..
 
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12

Epitaxial deposition of InGaAsP solid solutions in the misc..:

Vavilova, L. S. ; Kapitonov, V. A. ; Murashova, A. V..
Semiconductors.  34 (2000)  11 - p. 1255-1258 , 2000
Link: https://doi.org/10.1134/..
 
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13

Enhancement of optical luminescence of solids using a capil..:

Makhov, V. N. ; Dabagov, S. B. ; Marcelli, A....
Synchrotron Radiation News.  13 (2000)  3 - p. 20-23 , 2000
Link: https://doi.org/10.1080/..
 
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14

Photoluminescent and electroluminescent properties of spont..:

Vavilova, L. S. ; Kapitonov, V. A. ; Livshits, D. A....
Semiconductors.  34 (2000)  3 - p. 319-322 , 2000
Link: https://doi.org/10.1134/..
 
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15

Spontaneously forming periodic composition-modulated InGaAs..:

Bert, N. A. ; Vavilova, L. S. ; Ipatova, I. P....
Semiconductors.  33 (1999)  5 - p. 510-513 , 1999
Link: https://doi.org/10.1134/..
 
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