E-LIB Suche - Ergebnisse für: Murayama, Kenta

1

Network State Estimation by Spectral Analysis of Passively ..:

, In: 2024 International Conference on Information Networking (ICOIN),

Murayama, Kenta ; Okabe, Yasuo - p. 373-378 , 2024

Link: https://doi.org/10.1109/..

2

Non-destructive identification of edge-component burgers ve..:

Harada, Shunta ; Matsubara, Yasutaka ; Murayama, Kenta
Diamond and Related Materials. 138 (2023) - p. 110192 , 2023

Link: https://doi.org/10.1016/..

3

Polarized light observation of semiconductor wafers for pow..:

, In: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),

Murayama, Kenta ; Mizutani, Seiya ; Mizutani, Yuya. - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

4

Design of automatic detection algorithm for dislocation con..:

Kawata, Akira ; Murayama, Kenta ; Sumitani, Shogo.
Japanese Journal of Applied Physics. 60 (2021) SB - p. SBBD06 , 2021

Link: https://doi.org/10.35848..

5

Suppression of Polytype Transformation with Extremely Low-D..:

Murayama, Kenta ; Harada, Shunta ; Fujie, Fumihiro...
Materials Science Forum. 924 (2018) - p. 60-63 , 2018

Link: https://doi.org/10.4028/..

6

Direct observation of stacking fault shrinkage in 4H-SiC at..:

Fujie, Fumihiro ; Harada, Shunta ; Koizumi, Haruhiko...
Applied Physics Letters. 113 (2018) 1 - p. , 2018

Link: https://doi.org/10.1063/..

7

Formation of Basal Plane Dislocations Introduced by Collisi..:

Hori, Tsukasa ; Murayama, Kenta ; Harada, S....
Materials Science Forum. 897 (2017) - p. 28-31 , 2017

Link: https://doi.org/10.4028/..

8

SiC Solution Growth on Si Face with Extremely Low Density o..:

Murayama, Kenta ; Hori, Tsukasa ; Harada, S....
Materials Science Forum. 897 (2017) - p. 24-27 , 2017

Link: https://doi.org/10.4028/..

9

Solvent Design for High-Purity SiC Solution Growth:

Harada, S. ; Hatasa, Goki ; Murayama, Kenta...
Materials Science Forum. 897 (2017) - p. 32-35 , 2017

Link: https://doi.org/10.4028/..

10

Assembling interferometers and in-situ observation of ambie..:

Kimura, Yuki ; Murayama, Kenta ; Yamazaki, Tomoya.
Progress in Crystal Growth and Characterization of Materials. 62 (2016) 2 - p. 400-403 , 2016

Link: https://doi.org/10.1016/..

11

Conversion Behavior of Threading Screw Dislocations on C Fa..:

Xiao, Shiyu ; Harada, Shunta ; Murayama, Kenta..
Crystal Growth & Design. 16 (2016) 11 - p. 6436-6439 , 2016

Link: https://doi.org/10.1021/..

12

Spatial Distribution of Carrier Concentration in 4H-SiС Cry..:

Wang, Zhen Jiang ; Kawaguchi, Takahiko ; Murayama, Kenta...
Materials Science Forum. 858 (2016) - p. 57-60 , 2016

Link: https://doi.org/10.4028/..

13

Characterization of V-Shaped Defects Formed during the 4H-S..:

Xiao, Shiyu ; Harada, Shunta ; Murayama, Kenta.
Crystal Growth & Design. 16 (2016) 9 - p. 5136-5140 , 2016

Link: https://doi.org/10.1021/..

14

Polytype control by activity ratio of silicon to carbon dur..:

Horio, Atsushi ; Harada, Shunta ; Koike, Daiki...
Japanese Journal of Applied Physics. 55 (2015) 1S - p. 01AC01 , 2015

Link: https://doi.org/10.7567/..

15

Control of Interface Shape by Non-Axisymmetric Solution Con..:

Koike, Daiki ; Umezaki, Tomonori ; Murayama, Kenta...
Materials Science Forum. 821-823 (2015) - p. 18-21 , 2015

Link: https://doi.org/10.4028/..