E-LIB Suche - Ergebnisse für: Myronov, Maksym

1

Efficient In Situ Doping of Strained Germanium Tin Epilayer..:

Myronov, Maksym ; Jahandar, Pedram ; Rossi, Simone...
Advanced Electronic Materials. , 2024

Link: https://doi.org/10.1002/..

2

Revealing Low Thermal Conductivity of Germanium Tin Semicon..:

Ayinde, Sabur ; Myronov, Maksym
Advanced Materials Interfaces. 11 (2023) 2 - p. , 2023

Link: https://doi.org/10.1002/..

3

Holes Outperform Electrons in Group IV Semiconductor Materi..:

Myronov, Maksym ; Kycia, Jan ; Waldron, Philip...
Small Science. 3 (2023) 4 - p. , 2023

Link: https://doi.org/10.1002/..

4

Electron beam lithography and dimensional metrology for fin..:

Petkov, Nikolay ; Georgieva, Margarita ; Bugu, Sinan...
Microelectronic Engineering. 280 (2023) - p. 112071 , 2023

Link: https://doi.org/10.1016/..

5

Electric field-tuneable crossing of hole Zeeman splitting a..:

Myronov, Maksym ; Waldron, Philip ; Barrios, Pedro..
Communications Materials. 4 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

6

A fast approach to measuring the thickness uniformity of a ..:

Myronov, Maksym ; Colston, Gerard ; Davies, Jack.
Semiconductor Science and Technology. 37 (2022) 6 - p. 065003 , 2022

Link: https://doi.org/10.1088/..

7

Strain mapping of silicon carbon suspended membranes:

Colston, Gerard ; Newell, Oliver ; Rhead, Stephen D...
Materials & Design. 211 (2021) - p. 110135 , 2021

Link: https://doi.org/10.1016/..

8

Carrier Dynamics in Thin Germanium–Tin Epilayers:

Rogowicz, Ernest ; Kopaczek, Jan ; Kutrowska-Girzycka, Joanna...
ACS Applied Electronic Materials. 3 (2021) 1 - p. 344-352 , 2021

Link: https://doi.org/10.1021/..

9

Understanding the effect of p-, n-type dopants and vinyl ca..:

Mukanova, Aliya ; Serikkazyyeva, Assel ; Nurpeissova, Arailym...
Electrochimica Acta. 330 (2020) - p. 135179 , 2020

Link: https://doi.org/10.1016/..

10

Continuous-Wave Magneto-Optical Determination of the Carrie..:

Vitiello, Elisa ; Rossi, Simone ; Broderick, Christopher A....
Physical Review Applied. 14 (2020) 6 - p. , 2020

Link: https://doi.org/10.1103/..

11

Voided Ge/Si Platform to Integrate III-V Materials on Si:

Bioud, Youcef Ataellah ; Boucherif, Abderraouf ; Myronov, Maksym...
ECS Transactions. 93 (2019) 1 - p. 81-85 , 2019

Link: https://doi.org/10.1149/..

12

Minority carrier lifetime in indium doped silicon for photo..:

Murphy, John D. ; Pointon, Alex I. ; Grant, Nicholas E....
Progress in Photovoltaics: Research and Applications. 27 (2019) 10 - p. 844-855 , 2019

Link: https://doi.org/10.1002/..

13

Uprooting defects to enable high-performance III–V optoelec..:

Bioud, Youcef A. ; Boucherif, Abderraouf ; Myronov, Maksym...
Nature Communications. 10 (2019) 1 - p. , 2019

Link: https://doi.org/10.1038/..

14

Molecular Beam Epitaxy of High Mobility Silicon, Silicon Ge..:

, In: Molecular Beam Epitaxy,

Myronov, Maksym - p. 37-54 , 2018

Link: https://doi.org/10.1016/..

15

Formation of Mn5Ge3 by thermal annealing of evaporated Mn o..:

Bechler, Stefan ; Kern, Michal ; Funk, Hannes Simon...
Semiconductor Science and Technology. 33 (2018) 9 - p. 095008 , 2018

Link: https://doi.org/10.1088/..