E-LIB Suche - Ergebnisse für: NISHITANI, Tomohiro

1

Investigation on Applying an InGaN Photocathode with Negati..:

INOUE, Yusuke ; NISHITANI, Tomohiro ; HONDA, Anna...
TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES. 66 (2023) 1 - p. 10-13 , 2023

Link: https://doi.org/10.2322/..

2

The photoemission characteristics of a NEA InGaN photocatho..:

Kashima, Masahiro ; Itokawa, Yuya ; Kanai, Toshiya...
Applied Surface Science. 599 (2022) - p. 153882 , 2022

Link: https://doi.org/10.1016/..

3

AlGaAs/GaAs superlattice photocathode grown by molecular be..:

Morita, Iori ; Ishikawa, Fumitaro ; Honda, Anna...
Japanese Journal of Applied Physics. 60 (2021) SB - p. SBBK02 , 2021

Link: https://doi.org/10.35848..

4

Development of Pulsed TEM Equipped with Nitride Semiconduct..:

Yasuda, Hidehiro ; Nishitani, Tomohiro ; Ichikawa, Shuhei...
Quantum Beam Science. 5 (2021) 1 - p. 5 , 2021

Link: https://doi.org/10.3390/..

5

Optimization of InGaN thickness for high-quantum-efficiency..:

Sato, Daiki ; Honda, Anna ; Koizumi, Atsushi...
Microelectronic Engineering. 223 (2020) - p. 111229 , 2020

Link: https://doi.org/10.1016/..

6

1S-A1-2Innovate Electron Beam by GaN Semiconductor Photocat..:

Nishitani, Tomohiro ; Narita, Akihiro ; Tomita, Takeshi...
Microscopy. 66 (2017) suppl_1 - p. i6-i6 , 2017

Link: https://doi.org/10.1093/..

7

Electron Beam Sources using InGaN Semiconductor Photocathod..:

Nishitani, Tomohiro ; Narita, Akihiro ; Tomita, Takeshi...
Microscopy and Microanalysis. 23 (2017) S1 - p. 808-809 , 2017

Link: https://doi.org/10.1017/..

8

Observation of relaxation time of surface charge limit for ..:

Sato, Daiki ; Nishitani, Tomohiro ; Honda, Yoshio.
Japanese Journal of Applied Physics. 55 (2016) 5S - p. 05FH05 , 2016

Link: https://doi.org/10.7567/..

9

In situ Observation of Formation Process of Negative Electr..:

Hayase, Kazuya ; Nishitani, Tomohiro ; Suzuki, Katsunari...
Japanese Journal of Applied Physics. 52 (2013) 6S - p. 06GG05 , 2013

Link: https://doi.org/10.7567/..

10

High-Brightness Spin-Polarized Electron Source Using Semico..:

Nishitani, Tomohiro ; Tabuchi, Masao ; Takeda, Yoshikazu...
Japanese Journal of Applied Physics. 48 (2009) 6S - p. 06FF02 , 2009

Link: https://doi.org/10.1143/..

11

High Spin Polarization of Conduction Band Electrons in GaAs..:

Matsuyama, Tetsuya ; Takikita, Hisaya ; Horinaka, Hiromichi...
Japanese Journal of Applied Physics. 43 (2004) 6R - p. 3371 , 2004

Link: https://doi.org/10.1143/..

12

High Luminescence Polarization of InGaAs–AlGaAs Strained La..:

Matsuyama, Tetsuya ; Mukai, Masayasu ; Horinaka, Hiromichi...
Japanese Journal of Applied Physics. 40 (2001) 11R - p. 6468 , 2001

Link: https://doi.org/10.1143/..

13

Development of Pulsed TEM Equipped with Nitride Semiconduct..:

Hidehiro Yasuda ; Tomohiro Nishitani ; Shuhei Ichikawa...
https://dx.doi.org/10.3390/qubs5010005. , 2021

Link: https://doi.org/10.3390/..

14

Development of Pulsed TEM Equipped with Nitride Semiconduct..:

Hidehiro Yasuda ; Tomohiro Nishitani ; Shuhei Ichikawa...
https://www.mdpi.com/2412-382X/5/1/5. , 2021

Link: https://doi.org/10.3390/..

15

Distribution of alpha‐synuclein in rat salivary glands:

Nishitani, Tomiko ; Mitoh, Yoshihiro ; Yajima, Takehiro...
The Anatomical Record. 307 (2024) 8 - p. 2933-2946 , 2024

Link: https://doi.org/10.1002/..