E-LIB Suche - Ergebnisse für: NIshizawa, Shin-Ichi

1

Numerical and experimental investigation of the effect of t..:

Suewaka, Ryota ; Saishoji, Toshiaki ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 031006 , 2024

Link: https://doi.org/10.35848..

2

Study on stress in trench structures during silicon IGBTs p..:

Cai, Bozhou ; Yuan, Jiuyang ; Miyamura, Yoshiji..
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 03SP16 , 2024

Link: https://doi.org/10.35848..

3

Turn-off switching voltage surge analysis with dependence o..:

Fujimoto, Yuri ; Nishizawa, Shin-ichi ; Saito, Wataru
Japanese Journal of Applied Physics. 63 (2024) 2 - p. 02SP36 , 2024

Link: https://doi.org/10.35848..

4

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode..:

Takamori, Taro ; Wada, Keiji ; Saito, Wataru.
IEEE Open Journal of Power Electronics. 5 (2024) - p. 392-401 , 2024

Link: https://doi.org/10.1109/..

5

SiC Materials and Devices for Future Green Society:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Nishizawa, Shin-Ichi - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

6

Mechanism of gate voltage spike under digital gate control ..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components. 7 (2024) - p. 100054 , 2024

Link: https://doi.org/10.1016/..

7

Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress..:

Saito, Wataru ; NIshizawa, Shin-Ichi
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3590-3595 , 2024

Link: https://doi.org/10.1109/..

8

Adjustable Current Limiting Function With a Monolithically ..:

Takamori, Taro ; Wada, Keiji ; Boettcher, Norman...
IEEE Transactions on Industry Applications. 59 (2023) 5 - p. 6427-6435 , 2023

Link: https://doi.org/10.1109/..

9

Numerical and experimental investigation of effect of oxyge..:

Suewaka, Ryota ; Saishoji, Toshiaki ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics. 62 (2023) 7 - p. 071002 , 2023

Link: https://doi.org/10.35848..

10

Evaluation of thermally activated defects behaviors in nitr..:

Kajiwara, Kaoru ; Eriguchi, Kazutaka ; Fusegawa, Kazuhiro...
Japanese Journal of Applied Physics. 62 (2023) 7 - p. 075504 , 2023

Link: https://doi.org/10.35848..

11

The design considerations of stray inductance for power mod..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components. 6 (2023) - p. 100047 , 2023

Link: https://doi.org/10.1016/..

12

IGBT Power Module Design for Suppressing Gate Voltage Spike..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
IEEE Access. 11 (2023) - p. 6632-6640 , 2023

Link: https://doi.org/10.1109/..

13

The Study of Dislocation Propagation in Si Wafer during IGB..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Yuan, Jiuyang ; Miyamura, Yoshiji ; Nakano, Satoshi.. - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

14

Reliability investigation of repeated unclamped inductive s..:

Takamori, Taro ; Wada, Keiji ; Saito, Wataru.
Microelectronics Reliability. 150 (2023) - p. 115119 , 2023

Link: https://doi.org/10.1016/..

15

Failure Process of GaN-HEMTs by Repetitive Overvoltage Stre..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Saito, Wataru ; Nishizawa, Shin-ichi - p. 84-87 , 2023

Link: https://doi.org/10.1109/..