E-LIB Suche - Ergebnisse für: Nakanishi, Hisayuki

1

Optical and Solar Cell Properties of Alpha-ray, Proton, and..:

Sugiyama, Mutsumi ; Yasuniwa, Toshihiro ; Nakanishi, Hisayuki..
Japanese Journal of Applied Physics. 49 (2010) 4R - p. 042302 , 2010

Link: https://doi.org/10.1143/..

2

Preparation of SnS Films by Sulfurization of Sn Sheet:

Sugiyama, Mutsumi ; Miyauchi, Keisuke ; Minemura, Takehiro...
Japanese Journal of Applied Physics. 47 (2008) 6R - p. 4494 , 2008

Link: https://doi.org/10.1143/..

3

Effect of Deposition Conditions on Photoluminescence of CuI..:

Merdes, Saoussen ; Kinoshita, Atsuki ; Hadjoub, Zahia...
Japanese Journal of Applied Physics. 47 (2008) 11R - p. 8284 , 2008

Link: https://doi.org/10.1143/..

4

Photoluminescence Property of ZnSnP2 by Solution Growth and..:

Nakatani, Keigo ; Minemura, Takehiro ; Miyauchi, Keisuke...
Japanese Journal of Applied Physics. 47 (2008) 7R - p. 5342 , 2008

Link: https://doi.org/10.1143/..

5

Sulfurization Growth of SnS Films and Fabrication of CdS/Sn..:

Sugiyama, Mutsumi ; Miyauchi, Keisuke ; Minemura, Takehiro.
Japanese Journal of Applied Physics. 47 (2008) 12R - p. 8723 , 2008

Link: https://doi.org/10.1143/..

6

Control of the thin film properties of Cu(In,Ga)Se2 using w..:

Ishizuka, Shogo ; Shibata, Hajime ; Yamada, Akimasa...
Journal of Applied Physics. 100 (2006) 9 - p. , 2006

Link: https://doi.org/10.1063/..

7

Generation of Cubic Phase in Molecular-Beam-Epitaxy-Grown H..:

Kitamura, Toshio ; Shen, Xu-Qiang ; Sugiyama, Mutsumi...
Japanese Journal of Applied Physics. 45 (2006) 1R - p. 57 , 2006

Link: https://doi.org/10.1143/..

8

Surface Morphology of GaN Films Grown by RF-Plasma MBE Usin..:

Shimizu, Mitsuaki ; Chonan, Hiroshi ; Piao, Guaxi..
Materials Science Forum. 527-529 (2006) - p. 1493-1496 , 2006

Link: https://doi.org/10.4028/..

9

Helicon‐wave‐excited plasma sputtering deposition of Ga‐dop..:

Sugiyama, Mutsumi ; Murayama, Akira ; Imao, Takashi...
physica status solidi (a). 203 (2006) 11 - p. 2882-2886 , 2006

Link: https://doi.org/10.1002/..

10

Progress in the Efficiency of Wide-Gap Cu(In1-xGax)Se2 Sola..:

Ishizuka, Shogo ; Sakurai, Keiichiro ; Yamada, Akimasa...
Japanese Journal of Applied Physics. 44 (2005) 5L - p. L679 , 2005

Link: https://doi.org/10.1143/..

11

Growth of ZnInGaS4 by normal freezing method:

Sugiyama, Mutsumi ; Kinoshita, Minoru ; Nakanishi, Hisayuki
Journal of Physics and Chemistry of Solids. 66 (2005) 11 - p. 2127-2129 , 2005

Link: https://doi.org/10.1016/..

12

Metalorganic vapor phase epitaxy of Cu(Al Ga1−)(S Se1−)2 ch..:

Chichibu, ShigeFusa ; Harada, Yoshiyuki ; Sugiyama, Mutsumi.
Journal of Physics and Chemistry of Solids. 64 (2003) 9-10 - p. 1481-1489 , 2003

Link: https://doi.org/10.1016/..

13

Use of diethylselenide as a less-hazardous source for prepa..:

Chichibu, Shigefusa F ; Sugiyama, Mutsumi ; Ohbasami, Masahiro...
Journal of Crystal Growth. 243 (2002) 3-4 - p. 404-409 , 2002

Link: https://doi.org/10.1016/..

14

Band gap energy bowing and residual strain in CuAl(SxSe1−x)..:

Harada, Yoshiyuki ; Nakanishi, Hisayuki ; Chichibu, Shigefusa F.
Journal of Applied Physics. 91 (2002) 9 - p. 5909-5914 , 2002

Link: https://doi.org/10.1063/..

15

Excitonic polariton structures in Wurtzite GaN:

Torii, Kousuke ; Chichibu, Shigefusa F ; Deguchi, Takahiro...
Physica B: Condensed Matter. 302-303 (2001) - p. 268-276 , 2001

Link: https://doi.org/10.1016/..