E-LIB Suche - Ergebnisse für: Nakao, Yukiyasu

1

Impact of Recovery Characteristics on Switching Loss of SiC..:

Tominaga, Takaaki ; Iwamatsu, Toshiaki ; Nakao, Yukiyasu...
Materials Science Forum. 1062 (2022) - p. 447-451 , 2022

2

Body Potential Control via p-Type Contact Resistance and It..:

Tominaga, Takaaki ; Iwamatsu, Toshiaki ; Nakao, Yukiyasu...
IEEE Transactions on Electron Devices. 69 (2022) 1 - p. 285-290 , 2022

Link: https://doi.org/10.1109/..

3

Influence of recovery characteristics on switching behavior..:

Tominaga, Takaaki ; Iwamatsu, Toshiaki ; Nakao, Yukiyasu...
Japanese Journal of Applied Physics. 59 (2020) 8 - p. 084003 , 2020

Link: https://doi.org/10.35848..

4

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and..:

Kawahara, Koutarou ; Hino, Shiro ; Sadamatsu, Koji...
Materials Science Forum. 924 (2018) - p. 663-666 , 2018

Link: https://doi.org/10.4028/..

5

Investigation of the Robust Edge Termination Applied to 6.5..:

Ebihara, Kohei ; Kawahara, Koutarou ; Hino, Shiro...
Materials Science Forum. 924 (2018) - p. 778-781 , 2018

Link: https://doi.org/10.4028/..

6

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Vo..:

Yamamoto, Shigehisa ; Nakao, Yukiyasu ; Tomita, Nobuyuki..
Materials Science Forum. 778-780 (2014) - p. 951-954 , 2014

Link: https://doi.org/10.4028/..

7

Effect of Stacking Faults in Triangular Defects on 4H-SiC J..:

Konishi, Kazuya ; Nakata, Shuhei ; Nakaki, Yoshiyuki...
Japanese Journal of Applied Physics. 52 (2013) 4S - p. 04CP05 , 2013

Link: https://doi.org/10.7567/..

8

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switchi..:

Hino, Shiro ; Miura, Naruhisa ; Furukawa, Akihiko...
Materials Science Forum. 717-720 (2012) - p. 1097-1100 , 2012

Link: https://doi.org/10.4028/..

9

4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transis..:

Miura, Naruhisa ; Yoshida, Shohei ; Nakao, Yukiyasu...
Japanese Journal of Applied Physics. 48 (2009) 4S - p. 04C085 , 2009

Link: https://doi.org/10.1143/..

10

TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical ..:

Fujihira, Keiko ; Yoshida, Shohei ; Miura, Naruhisa...
Materials Science Forum. 600-603 (2008) - p. 799-802 , 2008

Link: https://doi.org/10.4028/..

11

Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-Si..:

Nakao, Yukiyasu ; Watanabe, Shoyu ; Miura, Naruhisa..
Materials Science Forum. 600-603 (2008) - p. 1123-1126 , 2008

Link: https://doi.org/10.4028/..

12

High Power-Density SiC Converter:

Kinouchi, Shin Ichi ; Nakatake, Hiroshi ; Kitamura, T....
Materials Science Forum. 600-603 (2008) - p. 1223-1226 , 2008

Link: https://doi.org/10.4028/..

13

Observation of Crystalline Defects Causing pn Junction Reve..:

Watanabe, Tomokatsu ; Nakao, Yukiyasu ; Fujihira, Keiko...
Materials Science Forum. 600-603 (2008) - p. 999-1002 , 2008

Link: https://doi.org/10.4028/..

14

Realization of Low On-Resistance 4H-SiC Power MOSFETs by Us..:

Fujihira, Keiko ; Miura, Naruhisa ; Watanabe, Tomokatsu...
Materials Science Forum. 556-557 (2007) - p. 827-830 , 2007

Link: https://doi.org/10.4028/..

15

Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Ep..:

Tarui, Yoichiro ; Watanabe, Tomokatsu ; Fujihira, Keiko...
Materials Science Forum. 527-529 (2006) - p. 1285-1288 , 2006

Link: https://doi.org/10.4028/..