E-LIB Suche - Ergebnisse für: Nandan, Keshari

1

Symmetric BSIM-SOI—Part II: A Compact Model for Partially D..:

Dabhi, Chetan Kumar ; Nandi, Debashish ; Nandan, Keshari...
IEEE Transactions on Electron Devices. 71 (2024) 4 - p. 2293-2300 , 2024

Link: https://doi.org/10.1109/..

2

Two-dimensional semiconductors based field-effect transisto..:

Nandan, Keshari ; Agarwal, Amit ; Bhowmick, Somnath.
Frontiers in Electronics. 4 (2023) - p. , 2023

Link: https://doi.org/10.3389/..

3

A Physics-Based Compact Model for Silicon Cold-Source Trans..:

Kar, Anirban ; Nandan, Keshari ; Chauhan, Yogesh Singh
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 1580-1588 , 2023

Link: https://doi.org/10.1109/..

4

Performance Evaluation of Monolayer ZrS3 Transistors for Ne..:

Naseer, Ateeb ; Nandan, Keshari ; Agarwal, Amit..
IEEE Transactions on Electron Devices. 70 (2023) 10 - p. 5435-5442 , 2023

Link: https://doi.org/10.1109/..

5

Di-Metal Chalcogenides: A New Family of Promising 2-D Semic..:

Naseer, Ateeb ; Nandan, Keshari ; Agarwal, Amit..
IEEE Transactions on Electron Devices. 70 (2023) 5 - p. 2445-2452 , 2023

Link: https://doi.org/10.1109/..

6

Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for..:

Nandan, Keshari ; Ghosh, Barun ; Agarwal, Amit..
IEEE Transactions on Electron Devices. 69 (2022) 1 - p. 406-413 , 2022

Link: https://doi.org/10.1109/..

7

Field-Effect Transistors Based on Two-dimensional Materials..:

Nandan, Keshari ; Naseer, Ateeb ; Chauhan, Yogesh S.
Transactions of the Indian National Academy of Engineering. 8 (2022) 1 - p. 1-14 , 2022

Link: https://doi.org/10.1007/..

8

Extremely Scaled Silicon Nanosheet Transistors:

, In: 2022 IEEE International Conference on Emerging Electronics (ICEE),

Nandan, Keshari ; Agarwal, Amit ; Bhowmick, Somnath. - p. 1-5 , 2022

Link: https://doi.org/10.1109/..

9

Compact Modeling of Multi-Layered MoS2 FETs Including Negat..:

Nandan, Keshari ; Yadav, Chandan ; Rastogi, Priyank...
IEEE Journal of the Electron Devices Society. 8 (2020) - p. 1177-1183 , 2020

Link: https://doi.org/10.1109/..

10

Compact Modeling of Surface Potential and Drain Current in ..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Nandan, Keshari ; Yadav, Chandan ; Rastogi, Priyank... - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

11

PdSe2 based field-effect transistors:

Nandan, Keshari ; Agarwal, Amit ; Bhowmick, Somnath.
http://arxiv.org/abs/2201.03493. , 2022

Link: http://arxiv.org/abs/220..

12

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for ..:

Nandan, Keshari ; Ghosh, Barun ; Agarwal, Amit..
http://arxiv.org/abs/2201.10278. , 2022

Link: http://arxiv.org/abs/220..

13

Designing power efficient transistors using narrow bandwidt..:

Nandan, Keshari ; Bhowmick, Somnath ; Chauhan, Yogesh S.
http://arxiv.org/abs/2211.09540. , 2022

Link: http://arxiv.org/abs/221..

14

Compact Modeling of Multi-layered MoS2 FETs including Negat..:

Nandan, Keshari ; Toral López, Alejandro ; Marin-Sanchez, Antonio..
Nandan, K., Yadav, C., Rastogi, P., Toral-Lopez, A., Marin-Sanchez, A., Marin, E. G., . & Chauhan, Y. S. (2020). Compact Modeling of Multi-Layered MoS 2 FETs Including Negative Capacitance Effect. IEEE Journal of the Electron Devices Society, 8, 1177-1183. [DOI 10.1109/JEDS.2020.3021031]. , 2020

Link: http://hdl.handle.net/10..

15

Two-dimensional semiconductors based field-effect transisto..:

Keshari Nandan ; Amit Agarwal ; Somnath Bhowmick.
https://www.frontiersin.org/articles/10.3389/felec.2023.1277927/full. , 2023

Link: https://doi.org/10.3389/..