E-LIB Suche - Ergebnisse für: Napolitani, E.

1

N-type doping of SiC-passivated Ge by pulsed laser melting ..:

Jiménez, A. ; Napolitani, E. ; Datas, A....
Solar Energy Materials and Solar Cells. 235 (2022) - p. 111463 , 2022

Link: https://doi.org/10.1016/..

2

Laser-induced activation of Mg-doped GaN: quantitative char..:

Nardo, A ; de Santi, C ; Carraro, C...
Journal of Physics D: Applied Physics. 55 (2022) 18 - p. 185104 , 2022

Link: https://doi.org/10.1088/..

3

A critical evaluation of Ag- and Ti-hyperdoped Si for Si-ba..:

Lim, S. Q. ; Akey, A. J. ; Napolitani, E....
Journal of Applied Physics. 129 (2021) 6 - p. , 2021

Link: https://doi.org/10.1063/..

4

New method for the production of thin and stable, segmented..:

Bertoldo, S. ; Maggioni, G. ; Raniero, W....
The European Physical Journal A. 57 (2021) 6 - p. , 2021

Link: https://doi.org/10.1140/..

5

p-type doping of Ge by Al ion implantation and pulsed laser..:

Milazzo, R. ; Linser, M. ; Impellizzeri, G....
Applied Surface Science. 509 (2020) - p. 145230 , 2020

Link: https://doi.org/10.1016/..

6

N-type doping of Ge by P spin on dopant and pulsed laser me..:

Jiménez, A ; Carturan, S M ; Milazzo, R...
Semiconductor Science and Technology. 35 (2020) 6 - p. 065002 , 2020

Link: https://doi.org/10.1088/..

7

Morphological and Functional Modifications of Optical Thin ..:

Pelizzo, M. G. ; Corso, A. J. ; Tessarolo, E....
ACS Applied Materials & Interfaces. 10 (2018) 40 - p. 34781-34791 , 2018

Link: https://doi.org/10.1021/..

8

Indiffusion of oxygen in germanium induced by pulsed laser ..:

Milazzo, R. ; Linser, M. ; Scarpa, D....
Materials Science in Semiconductor Processing. 88 (2018) - p. 93-96 , 2018

Link: https://doi.org/10.1016/..

9

Phase field model of the nanoscale evolution during the exp..:

Lombardo, S. F. ; Boninelli, S. ; Cristiano, F....
Journal of Applied Physics. 123 (2018) 10 - p. , 2018

Link: https://doi.org/10.1063/..

10

Pulsed laser diffusion of thin hole-barrier contacts in hig..:

Maggioni, G. ; Carturan, S. ; Raniero, W....
The European Physical Journal A. 54 (2018) 3 - p. , 2018

Link: https://doi.org/10.1140/..

11

Electronic band structures of undoped and P-doped Si nanocr..:

Arduca, E. ; Seguini, G. ; Martella, C....
Journal of Materials Chemistry C. 6 (2018) 1 - p. 119-126 , 2018

Link: https://doi.org/10.1039/..

12

Characterization and modeling of thermally-induced doping c..:

Boldrini, V ; Maggioni, G ; Carturan, S...
Journal of Physics D: Applied Physics. 52 (2018) 3 - p. 035104 , 2018

Link: https://doi.org/10.1088/..

13

Optical properties of highly n-doped germanium obtained byi..:

Frigerio, J ; Ballabio, A ; Gallacher, K...
Journal of Physics D: Applied Physics. 50 (2017) 46 - p. 465103 , 2017

Link: https://doi.org/10.1088/..

14

Formation of F6V2 complexes in F-implanted Ge determined by..:

Sanson, A. ; El Mubarek, H.A.W. ; Gandy, A.S....
Materials Science in Semiconductor Processing. 62 (2017) - p. 205-208 , 2017

Link: https://doi.org/10.1016/..

15

Low temperature deactivation of Ge heavily n-type doped by ..:

Milazzo, R. ; Impellizzeri, G. ; Piccinotti, D....
Applied Physics Letters. 110 (2017) 1 - p. , 2017

Link: https://doi.org/10.1063/..