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X
Nastovjak, A. G.
22  Ergebnisse:
Personensuche X
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1

Shape Modification of Vertical Nanowires under Annealing:

Nastovjak, A. G. ; Shwartz, N. L.
Optoelectronics, Instrumentation and Data Processing.  60 (2024)  2 - p. 220-228 , 2024
Link: https://doi.org/10.3103/..
 
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2

Simulation of GaAs nanowire annealing:

Nastovjak, A.G. ; Shterental, D.V. ; Shwartz, N.L.
Computational Materials Science.  228 (2023)  - p. 112310 , 2023
Link: https://doi.org/10.1016/..
 
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3

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic..:

Emelyanov, E. A. ; Nastovjak, A. G. ; Petrushkov, M. O....
Technical Physics Letters.  46 (2020)  2 - p. 161-164 , 2020
Link: https://doi.org/10.1134/..
 
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4

Role of Readsorption in the Formation of Vertical AIIIBV Na..:

Nastovjak, A. G. ; Usenkova, A. G. ; Shwartz, N. L..
Russian Microelectronics.  49 (2020)  3 - p. 166-172 , 2020
Link: https://doi.org/10.1134/..
 
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5

Reasons of Crystallite Formation during the Self-Catalyzed ..:

Nastovjak, A. G. ; Shwartz, N. L. ; Emelyanov, E. A....
Semiconductors.  54 (2020)  14 - p. 1850-1853 , 2020
Link: https://doi.org/10.1134/..
 
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6

Examination of Self-Catalyzed III–V Nanowire Growth by Mont..:

Nastovjak, A. G. ; Usenkova, A. G. ; Shwartz, N. L..
Semiconductors.  53 (2019)  16 - p. 2106-2109 , 2019
Link: https://doi.org/10.1134/..
 
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7

Influence of GaAs substrate properties on the congruent eva..:

Spirina, A A ; Nastovjak, A G ; Shwartz, N L
Journal of Physics: Conference Series.  993 (2018)  - p. 012011 , 2018
Link: https://doi.org/10.1088/..
 
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8

Monte Carlo Simulation of Ga Droplet Movement during the Ga..:

Spirina, A. A. ; Nastovjak, A. G. ; Neizvestny, I. G..
Semiconductors.  52 (2018)  16 - p. 2135-2139 , 2018
Link: https://doi.org/10.1134/..
 
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9

Сoncentric GaAs Nanorings Growth Modelling:

Nastovjak, A. G. ; Neizvestny, I. G. ; Vasilenko, M. A..
Semiconductors.  52 (2018)  5 - p. 639-644 , 2018
Link: https://doi.org/10.1134/..
 
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10

Monte Carlo simulation of the formation of AIIIBV nanostruc..:

Vasilenko, M. A. ; Nastovjak, A. G. ; Neizvestny, I. G..
Optoelectronics, Instrumentation and Data Processing.  52 (2016)  5 - p. 508-517 , 2016
Link: https://doi.org/10.3103/..
 
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11

Simulated growth of GaAs nanowires: Catalytic and self-cata..:

Knyazeva, M. V. ; Nastovjak, A. G. ; Neizvestny, I. G..
Semiconductors.  49 (2015)  1 - p. 60-68 , 2015
Link: https://doi.org/10.1134/..
 
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12

Simulation of growth of silicon nanowhiskers with Ge-Si het..:

Nastovjak, A. G. ; Neizvestny, I. G. ; Shwartz, N. L.
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.  5 (2011)  5 - p. 870-877 , 2011
Link: https://doi.org/10.1134/..
 
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13

Monte Carlo simulation of growth of nanowhiskers:

Nastovjak, A. G. ; Neizvestny, I. G. ; Shwartz, I. L..
Semiconductors.  44 (2010)  1 - p. 127-132 , 2010
Link: https://doi.org/10.1134/..
 
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14

Mechanisms of nanowhisker formation: Monte Carlo simulation:

Nastovjak, A. G. ; Neizvestny, I. G. ; Shwartz, N. L..
Optoelectronics, Instrumentation and Data Processing.  45 (2009)  4 - p. 342-347 , 2009
Link: https://doi.org/10.3103/..
 
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15

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epi..:

Tsamo, Guy ; Nastovjak, Alla G. ; Shwartz, Nataliya L....
The Journal of Physical Chemistry C.  128 (2024)  12 - p. 5168-5178 , 2024
Link: https://doi.org/10.1021/..
 
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