E-LIB Suche - Ergebnisse für: Natsuaki, Nobuyoshi

1

A model for the segregation and pileup of boron at the SiO2..:

Shima, Akio ; Jinbo, Tomoko ; Natsuaki, Nobuyoshi...
Journal of Applied Physics. 89 (2001) 6 - p. 3458-3463 , 2001

2

Inactivation of Low‐Dose Implanted Phosphorus Pileup in the..:

Sato, Hisako ; Yanagisawa, Yasunobu ; Ogasawara, Makoto...
Journal of The Electrochemical Society. 146 (1999) 1 - p. 367-371 , 1999

Link: https://doi.org/10.1149/..

3

ULSI-process demands of contamination control on ion implan..:

Natsuaki, Nobuyoshi ; Kamata, Tadashi ; Kondo, Kaori.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96 (1995) 1-2 - p. 62-67 , 1995

Link: https://doi.org/10.1016/..

4

Characteristics of Bipolar Transistors with Various Depths ..:

Tamba, Akihiro ; Kobayashi, Yutaka ; Suzuki, Tadashi.
Japanese Journal of Applied Physics. 31 (1992) 2R - p. 156 , 1992

Link: https://doi.org/10.1143/..

5

Amorphization Processes in Ion Implanted Si: Temperature De..:

Motooka, Teruaki ; Kobayashi, Fumihiko ; Fons, Paul...
Japanese Journal of Applied Physics. 30 (1991) 12S - p. 3617 , 1991

Link: https://doi.org/10.1143/..

6

Dislocation-Free Formation of Artificial Cavities in Si Sin..:

Yoshihiro, Naotsugu ; Natsuaki, Nobuyoshi
Japanese Journal of Applied Physics. 29 (1990) 1R - p. 1 , 1990

Link: https://doi.org/10.1143/..

7

Highly Reliable Thin Silicon Dioxide Layers Grown on Heavil..:

Ohyu, Kiyonori ; Wade, Yasuo ; Iijima, Shinpei.
Journal of The Electrochemical Society. 137 (1990) 7 - p. 2261-2265 , 1990

Link: https://doi.org/10.1149/..

8

Advantages of Fluorine Introduction in Boron Implanted Shal..:

Ohyu, Kiyonori ; Itoga, Toshihiko ; Natsuaki, Nobuyoshi
Japanese Journal of Applied Physics. 29 (1990) 3R - p. 457 , 1990

Link: https://doi.org/10.1143/..

9

Origin of ion beam mixing effects on morphological features..:

Suzuki, Tadashi ; Miyazaki, Takao ; Natsuaki, Nobuyoshi
Applied Physics A Solids and Surfaces. 50 (1990) 3 - p. 265-267 , 1990

Link: https://doi.org/10.1007/..

10

Depth Profile of Neutral Planar Tetravacancies in 3 MeV Pho..:

Yajima, Yusuke ; Natsuaki, Nobuyoshi ; Nishimatsu, Shigeru
Materials Science Forum. 38-41 (1989) - p. 1227-1232 , 1989

Link: https://doi.org/10.4028/..

11

The effect of fluorine implantation on the interface radiat..:

Nishioka, Yasushiro ; Ohyu, Kiyonori ; Ohji, Yuzuru...
Journal of Applied Physics. 66 (1989) 8 - p. 3909-3912 , 1989

Link: https://doi.org/10.1063/..

12

Improvement of SiO2/Si Interface Properties Utilising Fluor..:

Ohyu, Kiyonori ; Itoga, Toshihiko ; Nishioka, Yasushiro.
Japanese Journal of Applied Physics. 28 (1989) 6R - p. 1041 , 1989

Link: https://doi.org/10.1143/..

13

Observation of pn junctions on implanted silicon using a sc..:

Hosaka, Sumio ; Hosoki, Shigeyuki ; Takata, Keiji..
Applied Physics Letters. 53 (1988) 6 - p. 487-489 , 1988

Link: https://doi.org/10.1063/..

14

Secondary Defects in 2 MeV Phosphorus Implanted Silicon:

Tamura, Masao ; Natsuaki, Nobuyoshi
Japanese Journal of Applied Physics. 25 (1986) 6A - p. L474 , 1986

Link: https://doi.org/10.1143/..

15

Epitaxial Transformation of Ion-Implanted Polycrystalline S..:

Tamura, Masao ; Natsuaki, Nobuyoshi ; Aoki, Shigeru
Japanese Journal of Applied Physics. 24 (1985) 2A - p. L151 , 1985

Link: https://doi.org/10.1143/..