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Natzke, Philipp
7  Ergebnisse:
Personensuche X
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1

Power Cycling of Sintered SiC Power MOSFET Baseplate-less M..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kovacevic-Badstuebner, Ivana ; Mengotti, Elena ; Natzke, Philipp... - p. 60-63 , 2023
Link: https://doi.org/10.1109/..
 
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2

Gate Impedance Analysis of SiC power MOSFETs with SiO2 and ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Race, Salvatore ; Kumar, Piyush ; Natzke, Philipp... - p. 9-12 , 2023
Link: https://doi.org/10.1109/..
 
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3

Influence of Process Variations on the Electrical Performan..:

Muting, Johanna ; Natzke, Philipp ; Tsibizov, Alexander.
IEEE Transactions on Electron Devices.  68 (2021)  1 - p. 230-235 , 2021
Link: https://doi.org/10.1109/..
 
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4

Heavy-ion induced single event effects and latent damages i..:

Martinella, Corinna ; Natzke, Philipp ; Alía, Rubén G...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114423.  , 2022
Link: https://hdl.handle.net/2..
 
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5

Influence of Process Variations on the Electrical Performan..:

Müting, Johanna ; Natzke, Philipp ; Tsibizov, Alexander..
info:eu-repo/semantics/altIdentifier/doi/10.1109/ted.2020.3039434.  , 2021
Link: https://hdl.handle.net/2..
 
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6

Short Circuit Ruggedness of New Generation 1.2 kV SiC MOSFE..:

Kakarla, Bhagyalakshmi ; id_orcid:0 000-0002-9199-0710 ; Ziemann, Thomas...
info:eu-repo/semantics/altIdentifier/doi/10.1109/wipda.2018.8569077.  , 2018
Link: https://hdl.handle.net/2..
 
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7

Thin layer Ag-Sn transient liquid phase bonding using magne..:

Natzke, Philipp ; Grossner, Ulrike ; id_orcid:0 000-0002-2495-8550..
info:eu-repo/semantics/altIdentifier/doi/10.1109/WiPDA.2017.8170541.  , 2017
Link: https://hdl.handle.net/2..
 
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