Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Neudeck, Philip G.
174  Ergebnisse:
Personensuche X
?
1

Optimization of TaSi2 Processing for 500 °C Durable SiC JFE..:

Spry, David J. ; Neudeck, Philip G. ; Chang, Carl W...
Key Engineering Materials.  948 (2023)  - p. 83-88 , 2023
Link: https://doi.org/10.4028/..
 
?
2

Early Burn-In Parasitic Conduction in 500 °C Durable SiC JF..:

Neudeck, Philip G. ; Spry, David J. ; Lukco, Dorothy.
Key Engineering Materials.  948 (2023)  - p. 77-82 , 2023
Link: https://doi.org/10.4028/..
 
?
3

The Path Towards Realistic ASIC Electronics Deployment Into..:

, In: 2022 Device Research Conference (DRC),
Neudeck, Philip G. ; Spry, David J. ; Krasowski, Michael J.. - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
?
4

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C:

Mehta, Mohit R. ; Neudeck, Philip G. ; Lawson, John W.
Materials Science Forum.  1062 (2022)  - p. 519-522 , 2022
Link: https://doi.org/10.4028/..
 
?
5

Experimental Study of Structural Materials for Prolonged Ve..:

Lukco, Dorothy ; Spry, David J. ; Neudeck, Philip G....
Journal of Spacecraft and Rockets.  57 (2020)  6 - p. 1118-1128 , 2020
Link: https://doi.org/10.2514/..
 
?
6

Experimental Study on Mitigation of Lifetime-Limiting Diele..:

Spry, David J. ; Neudeck, Philip G. ; Chang, Carl W.
Materials Science Forum.  1004 (2020)  - p. 1148-1155 , 2020
Link: https://doi.org/10.4028/..
 
?
7

Towards Making SiC ICs Durable and Accessible for Use in th..:

Neudeck, Philip G. ; Spry, David J.
Materials Science Forum.  1004 (2020)  - p. 1057-1065 , 2020
Link: https://doi.org/10.4028/..
 
?
8

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temp..:

Neudeck, Philip G. ; Spry, David J. ; Krasowski, Michael..
Materials Science Forum.  963 (2019)  - p. 813-817 , 2019
Link: https://doi.org/10.4028/..
 
?
9

Prolonged 500°C Operation of 100+ Transistor Silicon Carbid..:

Spry, David J. ; Neudeck, Philip G. ; Lukco, Dorothy...
Materials Science Forum.  924 (2018)  - p. 949-952 , 2018
Link: https://doi.org/10.4028/..
 
?
10

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC I..:

Neudeck, Philip G.
Materials Science Forum.  924 (2018)  - p. 962-966 , 2018
Link: https://doi.org/10.4028/..
 
?
11

Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantat..:

Cochrane, Corey J. ; Kraus, Hannes ; Neudeck, Philip G....
Materials Science Forum.  924 (2018)  - p. 988-992 , 2018
Link: https://doi.org/10.4028/..
 
?
12

Experimentally Observed Electrical Durability of 4H-SiC JFE..:

Neudeck, Philip G. ; Spry, David J. ; Chen, Liang Yu...
Materials Science Forum.  897 (2017)  - p. 567-570 , 2017
Link: https://doi.org/10.4028/..
 
?
13

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Inte..:

Spry, David J. ; Neudeck, Philip G. ; Chen, Liang Yu...
Materials Science Forum.  858 (2016)  - p. 908-912 , 2016
Link: https://doi.org/10.4028/..
 
?
14

Evidence of Processing Non-Idealities in 4H-SiC Integrated ..:

Spry, David J. ; Neudeck, Philip G. ; Chen, Liang Yu...
Materials Science Forum.  858 (2016)  - p. 1112-1116 , 2016
Link: https://doi.org/10.4028/..
 
?
15

Experimental and Theoretical Study of 4H-SiC JFET Threshold..:

Neudeck, Philip G. ; Spry, David J. ; Chen, Liang Yu
Materials Science Forum.  858 (2016)  - p. 903-907 , 2016
Link: https://doi.org/10.4028/..
 
1-15