E-LIB Suche - Ergebnisse für: Ni, Xianfeng

1

Improving the thermoelectric performance of p-type (BixSb1−..:

Ju, Hang ; Zhu, Beibei ; Wang, Wenya...
Journal of Materials Chemistry A. , 2024

Link: https://doi.org/10.1039/..

2

Controlling the Superconducting Critical Temperature and Re..:

Pei, Yang ; Fan, Qian ; Ni, Xianfeng.
Coatings. 14 (2024) 4 - p. 496 , 2024

Link: https://doi.org/10.3390/..

3

Study on the Influence of KOH Wet Treatment on Red μLEDs:

Zhang, Shuhan ; Fan, Qian ; Ni, Xianfeng..
Crystals. 13 (2023) 12 - p. 1611 , 2023

Link: https://doi.org/10.3390/..

4

Surface Dispersion Suppression in High-Frequency GaN Device:

Zhu, Pengfei ; Ni, Xianfeng ; Fan, Qian.
Crystals. 12 (2022) 10 - p. 1461 , 2022

Link: https://doi.org/10.3390/..

5

Partial Discharge Pattern Recognition of Transformers Based..:

Sun, Yuanyuan ; Ma, Shuo ; Sun, Shengya...
Applied Sciences. 11 (2021) 15 - p. 6984 , 2021

Link: https://doi.org/10.3390/..

6

Van der Waals heterostructures of Janus XSeTe (X = Mo, W) a..:

Zhao, Huiqin ; Xie, Feng ; Liu, Yushen...
Materials Science in Semiconductor Processing. 123 (2021) - p. 105588 , 2021

Link: https://doi.org/10.1016/..

7

Failure of submarine cables used in high‐voltage power tran..:

Wang, Weiwang ; Yan, Xilin ; Li, Shengtao...
IET Generation, Transmission & Distribution. 15 (2021) 9 - p. 1387-1402 , 2021

Link: https://doi.org/10.1049/..

8

Extraction efficiency simulation in deep ultraviolet AlGaN ..:

Fan, Qian ; Ni, Xianfeng ; Hua, Bin.
Optical and Quantum Electronics. 53 (2021) 7 - p. , 2021

Link: https://doi.org/10.1007/..

9

Interface Engineering Enabling Next Generation GaN-on-Diamo..:

Gu, Yimin ; Zhang, Yun ; Hua, Bin...
Journal of Electronic Materials. 50 (2021) 8 - p. 4239-4249 , 2021

Link: https://doi.org/10.1007/..

10

Electronic and optical properties of InN-MTe2(M=Mo, W) hete..:

Ding, Yu ; Gu, Yan ; Yang, Guofeng...
Materials Science in Semiconductor Processing. 114 (2020) - p. 105067 , 2020

Link: https://doi.org/10.1016/..

11

A comprehensive study of enhanced photoluminescence on mono..:

Yang, Guofeng ; Fang, Xiudong ; Gu, Yan...
Applied Surface Science. 508 (2020) - p. 144794 , 2020

Link: https://doi.org/10.1016/..

12

The Electronic and Optical Properties of InSe-GeTe Heterobi..:

Yang, Guofeng ; Sun, Rui ; Gu, Yan...
Nanomaterials. 9 (2019) 12 - p. 1705 , 2019

Link: https://doi.org/10.3390/..

13

Photoluminescence of Mg‐doped m‐plane GaN grown by MOCVD on..:

Monemar, Bo ; Paskov, Plamen ; Pozina, Galia...
physica status solidi (a). 208 (2011) 7 - p. 1532-1534 , 2011

Link: https://doi.org/10.1002/..

14

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heteroju..:

Zhou, Lin ; Leach, Jacob H. ; Ni, Xianfeng..
Journal of Applied Physics. 107 (2010) 1 - p. , 2010

Link: https://doi.org/10.1063/..

15

Stress test measurements of lattice‐matched InAlN/AlN/GaN H..:

Leach, Jacob H. ; Wu, Mo ; Ni, Xianfeng...
physica status solidi (a). 207 (2010) 6 - p. 1345-1347 , 2010

Link: https://doi.org/10.1002/..