E-LIB Suche - Ergebnisse für: Ni, Yiqiang

1

Evaluation of p-GaN HEMTs degradation under high temperatur..:

Jiang, Kun ; Deng, Jing ; Ni, Yiqiang...
Journal of Physics: Conference Series. 2645 (2023) 1 - p. 012016 , 2023

Link: https://doi.org/10.1088/..

2

Investigation of Off-state Stress Time-Dependent Dynamic On..:

, In: 2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA),

Li, Yao ; Tang, Hui ; Zhang, Ke... - p. 965-968 , 2023

Link: https://doi.org/10.1109/..

3

Advanced Vertical Diamond Diodes with Trench Structure towa..:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Liu, Jiawei ; Qiu, Qiuling ; Mu, Caoyuan... - p. 309-312 , 2023

Link: https://doi.org/10.1109/..

4

Tensile Deformation Behavior of a Directionally Solidified ..:

Guo, Xiaotong ; Ni, Yiqiang ; Wang, Ganqiang...
Crystals. 12 (2022) 7 - p. 886 , 2022

Link: https://doi.org/10.3390/..

5

Quasi-vertical diamond temperature sensor by using Schottky..:

Xie, Wenliang ; He, Liang ; Ni, Yiqiang...
Materials Science in Semiconductor Processing. 152 (2022) - p. 107095 , 2022

Link: https://doi.org/10.1016/..

6

Recent Progress on Photoelectrochemical Water Splitting of ..:

Zhu, Ying ; He, Liang ; Ni, Yiqiang...
Nanomaterials. 12 (2022) 14 - p. 2374 , 2022

Link: https://doi.org/10.3390/..

7

Effect of geometry on the sensing mechanism of GaN Schottky..:

He, Liang ; Ni, Yiqiang ; Li, Liuan...
IEICE Electronics Express. 18 (2021) 19 - p. 20210332-20210332 , 2021

Link: https://doi.org/10.1587/..

8

Combined methods for analyzing the nonvisual failures of a ..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),

Ni, Yiqiang ; Dai, Zongbei ; Chen, Xuanlong... - p. 1-5 , 2020

Link: https://doi.org/10.1109/..

9

Research on Pad Size Design of 1210/0805 Surface Mounting C..:

, In: 2020 21st International Conference on Electronic Packaging Technology (ICEPT),

Wang, Hongqin ; Liang, Chaohui ; Han, Lishuai.. - p. 1-6 , 2020

Link: https://doi.org/10.1109/..

10

Application of DB-FIB in Defect Location for Failure Analys..:

, In: 2020 21st International Conference on Electronic Packaging Technology (ICEPT),

Zhang, Jialin ; Huang, Yan ; Xu, Guangning. - p. 1-3 , 2020

Link: https://doi.org/10.1109/..

11

Resistive Failure Localization of Electronic Components by ..:

, In: 2020 21st International Conference on Electronic Packaging Technology (ICEPT),

Chen, Xuanlong ; Li, Enliang ; Cai, Jinbao... - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

12

Breakdown Mechanism of AlGaN/GaN-based HFET With Carbon-dop..:

, In: 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA),

Ni, Yiqiang ; Li, Liuan ; He, Liang. - p. 1-5 , 2019

Link: https://doi.org/10.1109/..

13

A review of selective area grown recess structure for insul..:

He, Liang ; Yang, Fan ; Yao, Yao...
Japanese Journal of Applied Physics. 59 (2019) SA - p. SA0806 , 2019

Link: https://doi.org/10.7567/..

14

Dependence of carbon doping concentration on the strain-sta..:

Ni, Yiqiang ; Li, Liuan ; He, Liang...
Superlattices and Microstructures. 120 (2018) - p. 720-726 , 2018

Link: https://doi.org/10.1016/..

15

Investigation of O3‐Al2O3/H2O‐Al2O3 dielectric bilayer depo..:

Shen, Zhen ; He, Liang ; Zhou, Guilin...
physica status solidi (a). 213 (2016) 10 - p. 2693-2698 , 2016

Link: https://doi.org/10.1002/..