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Niass, Mussaab I.
15  Ergebnisse:
Personensuche X
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1

Performance analysis for 263 nm AlGaN DUV EELD by different..:

Rehman, Hameed Ur ; Niass, Mussaab I. ; Wang, Fang.
Optik.  281 (2023)  - p. 170828 , 2023
Link: https://doi.org/10.1016/..
 
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2

A Design and Comparative Investigation of Graded AlxGa1–xN ..:

NIASS, Mussaab I. ; WANG, Fang ; LIU, Yuhuai
Chinese Journal of Electronics.  31 (2022)  4 - p. 683-689 , 2022
Link: https://doi.org/10.1049/..
 
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3

Improve uniformity for an indoor visible light communicatio..:

Gismalla, Mohammed S.M. ; Abdullah, Mohammad F.L. ; Niass, Mussaab I...
International Journal of Communication Systems.  33 (2020)  8 - p. , 2020
Link: https://doi.org/10.1002/..
 
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4

Increased radiative recombination of AlGaN-based deep ultra..:

Xing, Zhong-qiu ; Zhou, Yong-jie ; Chen, Xue...
Optoelectronics Letters.  16 (2020)  2 - p. 87-91 , 2020
Link: https://doi.org/10.1007/..
 
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5

Improvement of radiative recombination rate in deep ultravi..:

Wang, Yi-Fu ; Niass, Mussaab I ; Wang, Fang.
Chinese Physics B.  29 (2020)  1 - p. 017301 , 2020
Link: https://doi.org/10.1088/..
 
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6

Reduction of Electron Leakage in a Deep Ultraviolet Nitride..:

Wang, Yi-Fu ; Niass, Mussaab I. ; Wang, Fang.
Chinese Physics Letters.  36 (2019)  5 - p. 057301 , 2019
Link: https://doi.org/10.1088/..
 
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7

Increased Radiative Recombination in Nitride Laser Diodes w..:

, In: 2019 IEEE 2nd International Conference on Electronics Technology (ICET),
Wang, Yifu ; Wang, Hangyu ; Niass, Mussaab I... - p. 435-439 , 2019
Link: https://doi.org/10.1109/..
 
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8

A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0..:

Niass, Mussaab I. ; Sharif, Muhammad Nawaz ; Wang, Yifu...
Journal of Semiconductors.  40 (2019)  12 - p. 122802 , 2019
Link: https://doi.org/10.1088/..
 
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9

Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DU..:

Niass, Mussaab I. ; Zang, Junwei ; Lu, Zhengqian...
Journal of Crystal Growth.  506 (2019)  - p. 24-29 , 2019
Link: https://doi.org/10.1016/..
 
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10

Improve the performance of deep ultraviolet semiconductor l..:

, In: 2019 8th International Symposium on Next Generation Electronics (ISNE),
Huo, Qingge ; Niass, Mussaab I. ; Liu, Yuhuai. - p. 1-3 , 2019
Link: https://doi.org/10.1109/..
 
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11

Effects of the Stepped-Doped Lower Waveguide and a Doped p-..:

Khan, Sajid Ullah ; Nawaz, Sharif Muhammad ; Niass, Mussaab Ibrahim..
Journal of Russian Laser Research.  43 (2022)  3 - p. 370-377 , 2022
Link: https://doi.org/10.1007/..
 
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12

AlGaN-Based Deep UV Laser Diodes without an Electron Blocki..:

Khan, Sajid Ullah ; Yao, Wang ; Aoxiang, Zhang...
Journal of Russian Laser Research.  43 (2022)  6 - p. 694-701 , 2022
Link: https://doi.org/10.1007/..
 
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13

The effects of AlGaN quantum barriers on carrier flow in de..:

Sharif, Muhammad Nawaz ; Niass, Mussaab Ibrahiam ; Liou, Juin J..
Semiconductor Science and Technology.  36 (2021)  5 - p. 055017 , 2021
Link: https://doi.org/10.1088/..
 
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14

p-AlInN electron blocking layer for AlGaN-based deep-ultrav..:

Sharif, Muhammad Nawaz ; Niass, Mussaab Ibrahim ; Liou, Juin J...
Superlattices and Microstructures.  158 (2021)  - p. 107022 , 2021
Link: https://doi.org/10.1016/..
 
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15

Enhancement of the optoelectronic characteristics of deep u..:

Nawaz, Sharif Muhammad ; Niass, Mussaab Ibrahim ; Wang, Yifu...
Superlattices and Microstructures.  145 (2020)  - p. 106643 , 2020
Link: https://doi.org/10.1016/..
 
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