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Nishizawa, Shinichi
291  Ergebnisse:
Personensuche X
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1

Study on stress in trench structures during silicon IGBTs p..:

Cai, Bozhou ; Yuan, Jiuyang ; Miyamura, Yoshiji..
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP16 , 2024
Link: https://doi.org/10.35848..
 
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2

Numerical and experimental investigation of the effect of t..:

Suewaka, Ryota ; Saishoji, Toshiaki ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 031006 , 2024
Link: https://doi.org/10.35848..
 
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3

SiC Materials and Devices for Future Green Society:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Nishizawa, Shin-Ichi - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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4

Overvoltage Failure Process of Cascode GaN Field Effect Tra..:

Saito, Wataru ; Nishizawa, Shin‐ichi
physica status solidi (a).  , 2024
Link: https://doi.org/10.1002/..
 
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5

Turn-off switching voltage surge analysis with dependence o..:

Fujimoto, Yuri ; Nishizawa, Shin-ichi ; Saito, Wataru
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP36 , 2024
Link: https://doi.org/10.35848..
 
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6

Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress..:

Saito, Wataru ; NIshizawa, Shin-Ichi
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3590-3595 , 2024
Link: https://doi.org/10.1109/..
 
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7

Mechanism of gate voltage spike under digital gate control ..:

Lou, Zaiqi ; Mamee, Thatree ; Hata, Katsuhiro...
Power Electronic Devices and Components.  7 (2024)  - p. 100054 , 2024
Link: https://doi.org/10.1016/..
 
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8

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode..:

Takamori, Taro ; Wada, Keiji ; Saito, Wataru.
IEEE Open Journal of Power Electronics.  5 (2024)  - p. 392-401 , 2024
Link: https://doi.org/10.1109/..
 
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9

Solid-State Circuit Breaker with Avalanche Robustness using..:

, In: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia),
Takamori, Taro ; Wada, Keiji ; Saito, Wataru. - p. 3212-3216 , 2023
Link: https://doi.org/10.23919..
 
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10

Area Efficient Approximate 4–2 Compressor and Probability-B..:

Zhang, Mingtao ; Nishizawa, Shinichi ; Kimura, Shinji
IEEE Transactions on Circuits and Systems II: Express Briefs.  70 (2023)  5 - p. 1714-1718 , 2023
Link: https://doi.org/10.1109/..
 
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11

Failure Process of GaN-HEMTs by Repetitive Overvoltage Stre..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Saito, Wataru ; Nishizawa, Shin-ichi - p. 84-87 , 2023
Link: https://doi.org/10.1109/..
 
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12

Numerical and experimental investigation of effect of oxyge..:

Suewaka, Ryota ; Saishoji, Toshiaki ; Nishizawa, Shin-ichi
Japanese Journal of Applied Physics.  62 (2023)  7 - p. 071002 , 2023
Link: https://doi.org/10.35848..
 
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13

The Study of Dislocation Propagation in Si Wafer during IGB..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Yuan, Jiuyang ; Miyamura, Yoshiji ; Nakano, Satoshi.. - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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14

Evaluation of thermally activated defects behaviors in nitr..:

Kajiwara, Kaoru ; Eriguchi, Kazutaka ; Fusegawa, Kazuhiro...
Japanese Journal of Applied Physics.  62 (2023)  7 - p. 075504 , 2023
Link: https://doi.org/10.35848..
 
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15

Reliability investigation of repeated unclamped inductive s..:

Takamori, Taro ; Wada, Keiji ; Saito, Wataru.
Microelectronics Reliability.  150 (2023)  - p. 115119 , 2023
Link: https://doi.org/10.1016/..
 
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