E-LIB Suche - Ergebnisse für: Nobuhiko Sawaki, Nobuhiko Sawaki - Sprache DE

Personensuche X

Sortierung: Relevanz

Sortierung: Jahr

1

Selective Growth of GaN/AlGaN Microstructures by Metalorgan..:

Tomonobu Kato, Tomonobu Kato ; Yoshio Honda, Yoshio Honda ; Yasutoshi Kawaguchi, Yasutoshi Kawaguchi..
Japanese Journal of Applied Physics. 40 (2001) 3S - p. 1896 , 2001

Link: https://doi.org/10.1143/..

2

Confinement and Transfer of a Two-Dimensional Wave Packet u..:

Hidetoshi Takagi, Hidetoshi Takagi ; Mitsuru Ishida, Mitsuru Ishida ; Nobuhiko Sawaki, Nobuhiko Sawaki
Japanese Journal of Applied Physics. 40 (2001) 3S - p. 1973 , 2001

Link: https://doi.org/10.1143/..

3

UV Photoemission Study of AlGaN Grown by Metalorganic Vapor..:

Takahiro Kozawa, Takahiro Kozawa ; Tomohiko Mori, Tomohiko Mori ; Takeshi Ohwaki, Takeshi Ohwaki..
Japanese Journal of Applied Physics. 39 (2000) 8A - p. L772 , 2000

Link: https://doi.org/10.1143/..

4

Optical and Crystalline Properties of Epitaxial-Lateral-Ove..:

Hiroki Sone, Hiroki Sone ; Shingo Nambu, Shingo Nambu ; Yasutoshi Kawaguchi, Yasutoshi Kawaguchi...
Japanese Journal of Applied Physics. 38 (1999) 4A - p. L356 , 1999

Link: https://doi.org/10.1143/..

5

Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloy..:

Touko Sugiura, Touko Sugiura ; Nobuyasu Hase, Nobuyasu Hase ; Yasuhiro Iguchi, Yasuhiro Iguchi.
Japanese Journal of Applied Physics. 38 (1999) 2S - p. 996 , 1999

Link: https://doi.org/10.1143/..

6

Computer Simulation of Tunneling Transfer and Formation of ..:

Mitsuru Ishida, Mitsuru Ishida ; Masahito Yamaguchi, Masahito Yamaguchi ; Nobuhiko Sawaki, Nobuhiko Sawaki
Japanese Journal of Applied Physics. 38 (1999) 1S - p. 339 , 1999

Link: https://doi.org/10.1143/..

7

Selective Area Growth of GaN on Si Substrate Using SiO 2 Ma..:

Yasutoshi Kawaguchi, Yasutoshi Kawaguchi ; Yoshio Honda, Yoshio Honda ; Hidetada Matsushima, Hidetada Matsushima...
Japanese Journal of Applied Physics. 37 (1998) 8B - p. L966 , 1998

Link: https://doi.org/10.1143/..

8

Mixing/Resonance of Electronic States and Optical Nonlinear..:

Hyung Soo Ahn, Hyung Soo Ahn ; Masahito Yamaguchi, Masahito Yamaguchi ; Nobuhiko Sawaki, Nobuhiko Sawaki
Japanese Journal of Applied Physics. 37 (1998) 1R - p. 45 , 1998

Link: https://doi.org/10.1143/..

9

Selective Area Growth of GaN Using Tungsten Mask by Metalor..:

Yasutoshi Kawaguchi, Yasutoshi Kawaguchi ; Shingo Nambu, Shingo Nambu ; Hiroki Sone, Hiroki Sone...
Japanese Journal of Applied Physics. 37 (1998) 7B - p. L845 , 1998

Link: https://doi.org/10.1143/..

10

Enhancement of Electron Mobility in Quasi-One-Dimensional S..:

Shoko Niwa, Shoko Niwa ; Masahito Yamaguchi, Masahito Yamaguchi ; Takamasa Suzuki, Takamasa Suzuki.
Japanese Journal of Applied Physics. 36 (1997) 6R - p. 3675 , 1997

Link: https://doi.org/10.1143/..

11

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire..:

Shimizu, Masaya ; Kawaguchi, Yasutoshi ; Kazumasa Hiramatsu, Kazumasa Hiramatsu.
Japanese Journal of Applied Physics. 36 (1997) 6R - p. 3381 , 1997

Link: https://doi.org/10.1143/..

12

Electrical Transport Properties of p-GaN:

Nakayama, Hisashi ; Hacke, Peter ; Khan, Mohammad Rezaul Huque...
Japanese Journal of Applied Physics. 35 (1996) 3A - p. L282 , 1996

Link: https://doi.org/10.1143/..

13

Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy..:

Kaneda, Naoki ; Detchprohm, Theeradetch ; Kazumasa Hiramatsu, Kazumasa Hiramatsu.
Japanese Journal of Applied Physics. 35 (1996) 4B - p. L468 , 1996

Link: https://doi.org/10.1143/..

14

Schottky Barrier on n-Type Al0.14Ga0.86N Grown by Organomet..:

Khan, Mohammad Rezaul Huque ; Nakayama, Hisashi ; Detchprohm, Theeradetch..
Japanese Journal of Applied Physics. 34 (1995) 12R - p. 6375 , 1995

Link: https://doi.org/10.1143/..

15

Picosecond Photoluminescence Study of Relaxation Phenomena ..:

Shoko Niwa, Shoko Niwa ; Takamasa Suzuki, Takamasa Suzuki ; Nobuhiko Sawaki, Nobuhiko Sawaki
Japanese Journal of Applied Physics. 34 (1995) 8S - p. 4515 , 1995

Link: https://doi.org/10.1143/..

1-15