E-LIB Suche - Ergebnisse für: Noguchi, Munetaka

1

Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on t..:

Kil, Tae-Hyeon ; Noguchi, Munetaka ; Watanabe, Hiroshi.
IEEE Electron Device Letters. 43 (2022) 1 - p. 92-95 , 2022

Link: https://doi.org/10.1109/..

2

Flat-band voltage shift of 4H-SiC MOS capacitors induced by..:

Kil, Tae-Hyeon ; Noguchi, Munetaka ; Watanabe, Hiroshi.
Solid-State Electronics. 183 (2021) - p. 108115 , 2021

Link: https://doi.org/10.1016/..

3

Compatibility of POCl3 Gate Process with the Fabrication of..:

Watanabe, Tomokatsu ; Noguchi, Munetaka ; Tomohisa, Shingo.
Materials Science Forum. 1004 (2020) - p. 565-570 , 2020

Link: https://doi.org/10.4028/..

4

Coulomb-limited mobility in 4H-SiC MOS inversion layer as a..:

Noguchi, Munetaka ; Iwamatsu, Toshiaki ; Amishiro, Hiroyuki...
Japanese Journal of Applied Physics. 59 (2020) 5 - p. 051006 , 2020

Link: https://doi.org/10.35848..

5

Carrier transport properties in inversion layer of Si-face ..:

Noguchi, Munetaka ; Iwamatsu, Toshiaki ; Amishiro, Hiroyuki...
Japanese Journal of Applied Physics. 58 (2019) 3 - p. 031004 , 2019

Link: https://doi.org/10.7567/..

6

Hall effect mobility in inversion layer of 4H-SiC MOSFETs w..:

Noguchi, Munetaka ; Iwamatsu, Toshiaki ; Amishiro, Hiroyuki...
Japanese Journal of Applied Physics. 58 (2019) SB - p. SBBD14 , 2019

Link: https://doi.org/10.7567/..

7

Hall effect mobility for SiC MOSFETs with increasing dose o..:

Noguchi, Munetaka ; Iwamatsu, Toshiaki ; Amishiro, Hiroyuki...
Japanese Journal of Applied Physics. 57 (2018) 4S - p. 04FR13 , 2018

Link: https://doi.org/10.7567/..

8

(Invited) Low Power Tunneling FET Technologies Using Ge/III..:

Takagi, Shinichi ; Ahn, Dae-Hwan ; Noguchi, Munetaka...
ECS Transactions. 80 (2017) 4 - p. 115-124 , 2017

Link: https://doi.org/10.1149/..

9

Accuracy of the Energy Distribution of the Interface States..:

Noguchi, Munetaka ; Iwamatsu, Toshiaki ; Amishiro, Hiroyuki...
Materials Science Forum. 858 (2016) - p. 437-440 , 2016

Link: https://doi.org/10.4028/..

10

High Ion/Ioff and low subthreshold slope planar-type InGaAs..:

Noguchi, Munetaka ; Kim, SangHyeon ; Yokoyama, Masafumi...
Journal of Applied Physics. 118 (2015) 4 - p. , 2015

Link: https://doi.org/10.1063/..

11

Analysis of effect of gate oxidation at SiC MOS interface o..:

Hasegawa, Junichi ; Noguchi, Munetaka ; Furuhashi, Masayuki...
Japanese Journal of Applied Physics. 54 (2015) 4S - p. 04DP05 , 2015

Link: https://doi.org/10.7567/..

12

Bora‐diaza‐indacene based fluorescent probes for simultaneo..:

Choi, Peter J ; Tatenaka, Yuki ; Noguchi, Katsuya...
ChemBioChem. , 2024

Link: https://doi.org/10.1002/..

13

Temperature-dependent fasciation mutants provide a link bet..:

Otsuka, Kurataka ; Mamiya, Akihito ; Konishi, Mineko...
eLife. 10 (2021) - p. , 2021

Link: https://doi.org/10.7554/..

14

β-Galactosidase-Catalyzed Fluorescent Reporter Labeling of ..:

Noguchi, Katsuya ; Shimomura, Takashi ; Ohuchi, Yuya...
Bioconjugate Chemistry. 31 (2020) 7 - p. 1740-1744 , 2020

Link: https://doi.org/10.1021/..

15

A mitochondria-selective near-infrared-emitting fluorescent..:

Choi, Peter ; Noguchi, Katsuya ; Ishiyama, Munetaka..
Bioorganic & Medicinal Chemistry Letters. 28 (2018) 11 - p. 2013-2017 , 2018

Link: https://doi.org/10.1016/..