E-LIB Suche - Ergebnisse für: Nolot, Emmanuel

1

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materi..:

Daoudi, Oumaima ; Nolot, Emmanuel ; Dartois, Mélanie...
physica status solidi (RRL) – Rapid Research Letters. , 2024

Link: https://doi.org/10.1002/..

2

A step toward calculating the uncertainties in combined GIX..:

Melhem, Stephanie ; Ménesguen, Yves ; Nolot, Emmanuel.
X-Ray Spectrometry. 52 (2023) 6 - p. 412-422 , 2023

Link: https://doi.org/10.1002/..

3

Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur..:

Chatmaneerungcharoen, Bhobnibhit ; Fraccaroli, Mathias ; Martin, François...
Chemistry of Materials. 34 (2022) 13 - p. 5842-5851 , 2022

Link: https://doi.org/10.1021/..

4

Advances in In-situ Boron and Phosphorous Doping of SiGeSn:

Frauenrath, Marvin ; Casiez, Lara ; Concepción Díaz, Omar...
ECS Transactions. 109 (2022) 4 - p. 3-19 , 2022

Link: https://doi.org/10.1149/..

5

Ge Content Optimization in Ge(SbSe)N OTS Materials for Sele..:

Laguna, Camille ; Bernard, Mathieu ; Fillot, Frederic...
IEEE Transactions on Electron Devices. 69 (2022) 11 - p. 6277-6283 , 2022

Link: https://doi.org/10.1109/..

6

Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best En..:

Lama, Giusy ; Bernard, Mathieu ; Bourgeois, Guillaume...
IEEE Transactions on Electron Devices. 69 (2022) 8 - p. 4248-4253 , 2022

Link: https://doi.org/10.1109/..

7

Neuromorphic Computing: Tailoring the Switching Dynamics in..:

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert...
Advanced Electronic Materials. 6 (2020) 11 - p. , 2020

Link: https://doi.org/10.1002/..

8

X‐Ray Diffraction Microstrain Analysis for Extraction of Th..:

Yon, Victor ; Rochat, Névine ; Charles, Matthew..
physica status solidi (b). 257 (2020) 4 - p. , 2020

Link: https://doi.org/10.1002/..

9

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRA..:

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert...
Advanced Electronic Materials. 6 (2020) 11 - p. , 2020

Link: https://doi.org/10.1002/..

10

Accelerating the development of phase‐change random access ..:

Nolot, Emmanuel ; Mazel, Yann ; Barnes, Jean‐Paul...
Surface and Interface Analysis. 52 (2020) 12 - p. 895-899 , 2020

Link: https://doi.org/10.1002/..

11

Cover Image:

Nolot, Emmanuel ; Mazel, Yann ; Barnes, Jean‐Paul...
Surface and Interface Analysis. 52 (2020) 12 - p. , 2020

Link: https://doi.org/10.1002/..

12

Boron and Phosphorous Doping of GeSn for Photodetectors and..:

Frauenrath, Marvin ; Hartmann, Jean-Michel ; Nolot, Emmanuel
ECS Transactions. 98 (2020) 5 - p. 325-338 , 2020

Link: https://doi.org/10.1149/..

13

Growth and characterization of SiGeSn pseudomorphic layers ..:

Khazaka, Rami ; Nolot, Emmanuel ; Aubin, Joris.
Semiconductor Science and Technology. 33 (2018) 12 - p. 124011 , 2018

Link: https://doi.org/10.1088/..

14

Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layer..:

Khazaka, Rami ; Aubin, Joris ; Nolot, Emmanuel.
ECS Transactions. 86 (2018) 7 - p. 207-218 , 2018

Link: https://doi.org/10.1149/..

15

Rapid, semi-quantitative depth profiling of ultra-thin film..:

, In: 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC),

Mazel, Yann ; Barnes, Jean-Paul ; Nolot, Emmanuel.. - p. 285-288 , 2017

Link: https://doi.org/10.1109/..