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Nomoto, Kazuki
125  Ergebnisse:
Personensuche X
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1

Efficient data processing using tunable entropy-stabilized ..:

Yoo, Sangmin ; Chae, Sieun ; Chiang, Tony...
Nature Electronics.  , 2024
Link: https://doi.org/10.1038/..
 
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2

Ultrafast spectral diffusion of GaN defect single photon em..:

Geng, Yifei ; Nomoto, Kazuki
Applied Physics Letters.  123 (2023)  17 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

Distribution of coronal plane alignment of the knee classif..:

Nomoto, Kazuki ; Hanada, Mitsuru ; Hotta, Kensuke.
Knee Surgery, Sports Traumatology, Arthroscopy.  31 (2023)  12 - p. 5507-5513 , 2023
Link: https://doi.org/10.1007/..
 
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4

Understanding the Inconsistencies in the Permissions Mechan..:

Nomoto, Kazuki ; Watanabe, Takuya ; Shioji, Eitaro..
Journal of Information Processing.  31 (2023)  0 - p. 620-642 , 2023
Link: https://doi.org/10.2197/..
 
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5

N-polar GaN/AlGaN/AlN high electron mobility transistors on..:

Kim, Eungkyun ; Zhang, Zexuan ; Encomendero, Jimy...
Applied Physics Letters.  122 (2023)  9 - p. , 2023
Link: https://doi.org/10.1063/..
 
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6

AlScN High Electron Mobility Transistors: Integrating High ..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Casamento, Joseph ; Nomoto, Kazuki ; Nguyen, Thai-Son... - p. 132-136 , 2023
Link: https://doi.org/10.1109/..
 
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7

2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Tr..:

Hickman, Austin ; Chaudhuri, Reet ; Li, Lei...
physica status solidi (a).  , 2023
Link: https://doi.org/10.1002/..
 
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8

Electric field induced migration of native point defects in..:

Haseman, Micah S. ; Ramdin, Daram N. ; Li, Wenshen...
Journal of Applied Physics.  133 (2023)  3 - p. , 2023
Link: https://doi.org/10.1063/..
 
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9

PinchKey: A Natural and User-Friendly Approach to VR User A..:

, In: Proceedings of the 2023 European Symposium on Usable Security,
Suzuki, Mei ; Iijima, Ryo ; Nomoto, Kazuki.. - p. 192-204 , 2023
Link: https://dl.acm.org/doi/1..
 
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10

15-GHz Epitaxial AlN FBARs on SiC Substrates:

Zhao, Wenwen ; Asadi, Mohammad Javad ; Li, Lei...
IEEE Electron Device Letters.  44 (2023)  6 - p. 903-906 , 2023
Link: https://doi.org/10.1109/..
 
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11

Quantitative scanning microwave microscopy of 2D electron a..:

Wang, Xiaopeng ; Fabi, Gianluca ; Chaudhuri, Reet...
Applied Physics Letters.  120 (2022)  1 - p. , 2022
Link: https://doi.org/10.1063/..
 
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12

High-density polarization-induced 2D electron gases in N-po..:

Zhang, Zexuan ; Encomendero, Jimy ; Kim, Eungkyun...
Applied Physics Letters.  121 (2022)  8 - p. , 2022
Link: https://doi.org/10.1063/..
 
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13

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single..:

, In: 2022 Device Research Conference (DRC),
Kim, Eungkyun ; Zhang, Zexuan ; Singhal, Jashan... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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14

Distributed polarization-doped GaN p–n diodes with near-uni..:

Nomoto, Kazuki ; Li, Wenshen ; Song, Bo...
Applied Physics Letters.  120 (2022)  12 - p. , 2022
Link: https://doi.org/10.1063/..
 
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15

AlN quasi-vertical Schottky barrier diode on AlN bulk subst..:

Maeda, Takuya ; Page, Ryan ; Nomoto, Kazuki...
Applied Physics Express.  15 (2022)  6 - p. 061007 , 2022
Link: https://doi.org/10.35848..
 
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