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Nourbakhsh, Amirhasan
20  Ergebnisse:
Personensuche X
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1

Impact of Al2O3 Passivation on the Photovoltaic Performance..:

McVay, Elaine ; Zubair, Ahmad ; Lin, Yuxuan..
ACS Applied Materials & Interfaces.  12 (2020)  52 - p. 57987-57995 , 2020
Link: https://doi.org/10.1021/..
 
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2

A high precision method for length-based separation of carb..:

Borzooeian, Zahra ; Taslim, Mohammad E. ; Ghasemi, Omid...
PLOS ONE.  13 (2018)  6 - p. e0197972 , 2018
Link: https://doi.org/10.1371/..
 
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3

Heterogeneous Integration of 2D Materials and Devices on a ..:

, In: Beyond-CMOS Technologies for Next Generation Computer Design,
Nourbakhsh, Amirhasan ; Yu, Lili ; Lin, Yuxuan... - p. 43-84 , 2018
Link: https://doi.org/10.1007/..
 
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4

Subthreshold swing improvement in MoS2 transistors by the n..:

Nourbakhsh, Amirhasan ; Zubair, Ahmad ; Joglekar, Sameer..
Nanoscale.  9 (2017)  18 - p. 6122-6127 , 2017
Link: https://doi.org/10.1039/..
 
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5

Hot Electron Transistor with van der Waals Base-Collector H..:

Zubair, Ahmad ; Nourbakhsh, Amirhasan ; Hong, Jin-Yong...
Nano Letters.  17 (2017)  5 - p. 3089-3096 , 2017
Link: https://doi.org/10.1021/..
 
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6

Highly efficient and stable MoS2FETs with reversible n-dopi..:

Lockhart de la Rosa, César J. ; Nourbakhsh, Amirhasan ; Heyne, Markus...
Nanoscale.  9 (2017)  1 - p. 258-265 , 2017
Link: https://doi.org/10.1039/..
 
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7

Transport Properties of a MoS2/WSe2 Heterojunction Transist..:

Nourbakhsh, Amirhasan ; Zubair, Ahmad ; Dresselhaus, Mildred S..
Nano Letters.  16 (2016)  2 - p. 1359-1366 , 2016
Link: https://doi.org/10.1021/..
 
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8

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length:

Nourbakhsh, Amirhasan ; Zubair, Ahmad ; Sajjad, Redwan N....
Nano Letters.  16 (2016)  12 - p. 7798-7806 , 2016
Link: https://doi.org/10.1021/..
 
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9

Graphene oxide monolayers as atomically thin seeding layers..:

Nourbakhsh, Amirhasan ; Adelmann, Christoph ; Song, Yi...
Nanoscale.  7 (2015)  24 - p. 10781-10789 , 2015
Link: https://doi.org/10.1039/..
 
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10

Improving Ion/Ioff In Bilayer Graphene Transistors by Molec..:

Nourbakhsh, Amirhasan ; Cantoro, Mirco ; Klekachev, Alexander V...
ECS Transactions.  50 (2013)  14 - p. 83-90 , 2013
Link: https://doi.org/10.1149/..
 
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11

(Invited) Toward Ambient-Stable Molecular Gated Graphene-FE..:

Nourbakhsh, Amirhasan ; Cantoro, Mirco ; Heyns, Marc M...
ECS Transactions.  53 (2013)  1 - p. 121-129 , 2013
Link: https://doi.org/10.1149/..
 
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12

Cover Picture: Tunable n‐ and p‐type doping of single‐layer..:

Nourbakhsh, Amirhasan ; Cantoro, Mirco ; Li, Bing...
physica status solidi (RRL) – Rapid Research Letters.  6 (2012)  2 - p. , 2012
Link: https://doi.org/10.1002/..
 
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13

Tunable n‐ and p‐type doping of single‐layer graphene by en..:

Nourbakhsh, Amirhasan ; Cantoro, Mirco ; Li, Bing...
physica status solidi (RRL) – Rapid Research Letters.  6 (2011)  2 - p. 53-55 , 2011
Link: https://doi.org/10.1002/..
 
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14

Single Layer vs Bilayer Graphene: A Comparative Study of th..:

Nourbakhsh, Amirhasan ; Cantoro, Mirco ; Klekachev, Alexander V....
The Journal of Physical Chemistry C.  115 (2011)  33 - p. 16619-16624 , 2011
Link: https://doi.org/10.1021/..
 
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15

Modified, semiconducting graphene in contact with a metal: ..:

Nourbakhsh, Amirhasan ; Cantoro, Mirco ; Hadipour, Afshin...
Applied Physics Letters.  97 (2010)  16 - p. , 2010
Link: https://doi.org/10.1063/..
 
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