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Nuns, T.
54  Ergebnisse:
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1

Radiation Tolerance of Low-Noise Photoreceivers for the LIS..:

Colcombet, P. ; Dinu-Jaeger, N. ; Inguimbert, C....
IEEE Transactions on Nuclear Science.  , 2024
Link: https://doi.org/10.1109/..
 
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2

Influence of LDD spacers on total ionizing dose response of..:

Cussac, G. ; Nuns, T. ; Ducret, S...
Microelectronics Reliability.  135 (2022)  - p. 114603 , 2022
Link: https://doi.org/10.1016/..
 
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3

Influence of a 3D electric field enhancement model on the M..:

Lemière, K. ; Inguimbert, C. ; Nuns, T.
Journal of Applied Physics.  128 (2020)  16 - p. , 2020
Link: https://doi.org/10.1063/..
 
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4

Total Ionizing Dose Hardness Enhancement at Room Temperatur..:

, In: 2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Cussac, G. ; Artola, L. ; Nuns, T.. - p. 1-8 , 2020
Link: https://doi.org/10.1109/..
 
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5

About the scatter of displacement damage and its consequenc..:

, In: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Inquimbert, C. ; Nuns, T. - p. 1-9 , 2018
Link: https://doi.org/10.1109/..
 
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6

Experimental Study of the NIEL Scaling for Silicon Devices:

, In: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Nuns, T. ; Inguimbert, C. ; Soonckindt, S.... - p. 1-8 , 2018
Link: https://doi.org/10.1109/..
 
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7

Radiation Tolerance of Low-Noise Photoreceivers for the LIS..:

Colcombet, P ; Dinu-Jaeger, N ; Inguimbert, C...
http://arxiv.org/abs/2310.09809.  , 2023
Link: http://arxiv.org/abs/231..
 
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8

Développement de sous-cellules pin InGaAsN à 1 eV pour inté..:

Levillayer, Maxime ; Almuneau, Guilhem ; Massiot, Inès...
hal-02382557.  , 2019
Link: https://hal.science/hal-..
 
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9

Développement de sous-cellules pin InGaAsN à 1 eV pour inté..:

Levillayer, Maxime ; Almuneau, Guilhem ; Massiot, Inès...
hal-02382557.  , 2019
Link: https://hal.science/hal-..
 
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10

Développement de sous-cellules pin InGaAsN à 1 eV pour inté..:

Levillayer, Maxime ; Almuneau, Guilhem ; Massiot, Inès...
hal-02382557.  , 2019
Link: https://hal.science/hal-..
 
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11

Développement de sous-cellules pin InGaAsN à 1 eV pour inté..:

Levillayer, Maxime ; Almuneau, Guilhem ; Massiot, Inès...
hal-02382557.  , 2019
Link: https://hal.archives-ouv..
 
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12

Développement de sous-cellules pin InGaAsN à 1 eV pour inté..:

Levillayer, Maxime ; Almuneau, Guilhem ; Massiot, Inès...
hal-02382557.  , 2019
Link: https://hal.science/hal-..
 
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13

Gamma and electron NIEL dependence of irradiated GaAs:

El Allam, M ; Inguimbert, C ; Nuns, T...
hal-01372019.  , 2016
Link: https://hal.archives-ouv..
 
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14

Gamma and electron NIEL dependence of irradiated GaAs:

El Allam, M ; Inguimbert, C ; Nuns, T...
hal-01372019.  , 2016
Link: https://hal.science/hal-..
 
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15

W-SBA based materials as efficient catalysts for the ODS of..:

Estephane, G. ; Lancelot, C. ; Blanchard, P....
Applied Catalysis A: General.  571 (2019)  - p. 42-50 , 2019
Link: https://doi.org/10.1016/..
 
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