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O. Velichko A
330  Ergebnisse:
Personensuche X
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1

Simulation of p‐type diffusion in compound semiconductor: t..:

Saad, A. ; Fedotov, A. ; Velichko, O...
physica status solidi (b).  243 (2006)  12 - p. 2665-2671 , 2006
Link: https://doi.org/10.1002/..
 
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2

Effect of Ca2+ and Zn2+ ions on the adsorption and inhibito..:

Rublova, Y. D. ; Velichko, O. V. ; Danilov, F. I.
Protection of Metals and Physical Chemistry of Surfaces.  53 (2017)  5 - p. 916-919 , 2017
Link: https://doi.org/10.1134/..
 
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3

Effect of Charged Clusters on the Diffusion of Impurity Ato..:

Velichko, O. I.
Journal of Engineering Physics and Thermophysics.  90 (2017)  3 - p. 725-728 , 2017
Link: https://doi.org/10.1007/..
 
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4

Friction stir welding of thick plates of Al–Mg–Sc alloy:

Velichko, O. V. ; Ivanov, S. Yu. ; Karkhin, V. A...
Welding International.  30 (2016)  8 - p. 630-634 , 2016
Link: https://doi.org/10.1080/..
 
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5

Microscopic mechanism responsible for radiation-enhanced di..:

Velichko, O. I.
Philosophical Magazine.  96 (2016)  23 - p. 2412-2428 , 2016
Link: https://doi.org/10.1080/..
 
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6

Methods of overlapping closed joints in friction stir weldi..:

Velichko, O. V. ; Ivanov, S. Yu ; Karkhin, V. A....
Welding International.  30 (2016)  10 - p. 797-801 , 2016
Link: https://doi.org/10.1080/..
 
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7

Structure and Properties of Thick-Walled Joints of Alloy 15..:

Velichko, O. V. ; Ivanov, S. Yu. ; Karkhin, V. A...
Metal Science and Heat Treatment.  58 (2016)  5-6 - p. 346-351 , 2016
Link: https://doi.org/10.1007/..
 
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8

Modeling high-concentration phosphorus diffusion in crystal..:

Velichko, O. I. ; Aksenov, V. V. ; Anufriev, L. P...
Journal of Engineering Physics and Thermophysics.  86 (2013)  3 - p. 667-675 , 2013
Link: https://doi.org/10.1007/..
 
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9

Modeling of the interstitial diffusion of boron in crystall..:

Velichko, O. I. ; Aksenov, V. V. ; Kovaleva, A. P.
Journal of Engineering Physics and Thermophysics.  85 (2012)  4 - p. 926-931 , 2012
Link: https://doi.org/10.1007/..
 
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10

Simulation of boron diffusion during low-temperature anneal..:

Velichko, O. I. ; Kavaliova, A. P.
Applied Physics A.  111 (2012)  4 - p. 1221-1227 , 2012
Link: https://doi.org/10.1007/..
 
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11

Modeling of the transient interstitial diffusion of implant..:

Velichko, O.I. ; Kavaliova, A.P.
Physica B: Condensed Matter.  407 (2012)  12 - p. 2176-2184 , 2012
Link: https://doi.org/10.1016/..
 
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12

Simulation of silicon diffusion in GaAs:

Saad, A.M. ; Velichko, O.I.
Physica B: Condensed Matter.  406 (2011)  5 - p. 1065-1069 , 2011
Link: https://doi.org/10.1016/..
 
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13

Interstitial diffusion under conditions of trapping of inte..:

Velichko, O.I. ; Shaman, Yu.P.
Materials Science in Semiconductor Processing.  13 (2010)  1 - p. 13-20 , 2010
Link: https://doi.org/10.1016/..
 
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14

Modeling of the long-range interstitial migration of ion im..:

Velichko, O.I. ; Kniazhava, N.V.
Computational Materials Science.  48 (2010)  2 - p. 409-412 , 2010
Link: https://doi.org/10.1016/..
 
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15

Calibration and measurement capabilities of metrological in..:

Velichko, O. N.
Measurement Techniques.  53 (2010)  6 - p. 721-726 , 2010
Link: https://doi.org/10.1007/..
 
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