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Ohguro, Tatsuya
107  Ergebnisse:
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1

On-Resistance Measurements of Low Voltage MOSFET at wafer l..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),
Oasa, Kohei ; Nishiwaki, Tatsuya ; Ohguro, Tatsuya.. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

Measuring of parasitic resistance of stacked chip of Si pow..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),
Ohguro, Tatsuya ; Kojima, Hideharu ; Hara, Takuma.. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

Stacked chip of Si power device with double side Cu plating..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Ohguro, Tatsuya ; Kojima, Hideharu ; Hara, Takuma.. - p. 187-190 , 2021
Link: https://doi.org/10.23919..
 
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4

Alpha-Particle Shielding Effect of Thick Copper Plating Fil..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Nishiwaki, Tatsuya ; Oasa, Kohei ; Ichinoseki, Kentaro... - p. 91-94 , 2019
Link: https://doi.org/10.1109/..
 
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5

Cu Double Side Plating Technology for High Performance and ..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kobayashi, Hitoshi ; Ohguro, Tatsuya ; Kai, Tetsuya... - p. 515-518 , 2019
Link: https://doi.org/10.1109/..
 
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6

Impact of Plasma‐Damaged‐Layer Removal on GaN HEMT Devices:

Kodera, Masako ; Yoshioka, Akira ; Sugiyama, Toru...
physica status solidi (a).  215 (2017)  9 - p. , 2017
Link: https://doi.org/10.1002/..
 
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7

Session 3: Arrayed test structures:

, In: 2016 International Conference on Microelectronic Test Structures (ICMTS),
Ohguro, Tatsuya ; Hess, Christopher - p. 45-45 , 2016
Link: https://doi.org/10.1109/..
 
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8

Technology of FinFET for High RF and Analog/Mixed-Signal Pe..:

OHGURO, Tatsuya ; INABA, Satoshi ; KANEKO, Akio.
IEICE Transactions on Electronics.  E98.C (2015)  6 - p. 455-460 , 2015
Link: https://doi.org/10.1587/..
 
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9

A creep-immune electrostatic actuator for RF-MEMS tunable c..:

Ogawa, Etsuji ; Ikehashi, Tamio ; Saito, Tomohiro...
Sensors and Actuators A: Physical.  169 (2011)  2 - p. 373-377 , 2011
Link: https://doi.org/10.1016/..
 
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10

Degraded Frequency-Tuning Range and Oscillation Amplitude o..:

MIYAKE, Masataka ; HORI, Daisuke ; SADACHIKA, Norio...
IEICE Transactions on Electronics.  E92-C (2009)  6 - p. 777-784 , 2009
Link: https://doi.org/10.1587/..
 
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11

Lithographical bending control method for a piezoelectric a..:

Ikehashi, Tamio ; Ogawa, Etsuji ; Yamazaki, Hiroaki.
International Journal of Microwave and Wireless Technologies.  1 (2009)  1 - p. 37-42 , 2009
Link: https://doi.org/10.1017/..
 
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12

Frequency Dependence of Measured Metal Oxide Semiconductor ..:

Minami, Takafumi ; Takeda, Yoichi ; Miyake, Masataka...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2610 , 2008
Link: https://doi.org/10.1143/..
 
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13

Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model ..:

Miyake, Masataka ; Sadachika, Norio ; Navarro, Dondee...
Japanese Journal of Applied Physics.  46 (2007)  4S - p. 2091 , 2007
Link: https://doi.org/10.1143/..
 
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14

An intelligent bipolar actuation method with high stiction ..:

Yamazaki, Hiroaki ; Ikehashi, Tamio ; Ohguro, Tatsuya...
Sensors and Actuators A: Physical.  139 (2007)  1-2 - p. 233-236 , 2007
Link: https://doi.org/10.1016/..
 
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15

Channel noise enhancement in small geometry MOSFET and its ..:

Itoh, Nobuyuki ; Kojima, Kenji ; Ohguro, Tatsuya
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.  18 (2005)  4 - p. 255-266 , 2005
Link: https://doi.org/10.1002/..
 
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