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X
Ohlmann, J.
1816  Ergebnisse:
Personensuche X
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1

III-V material growth on electrochemically porosified Ge su..:

Winter, E. ; Schreiber, W. ; Schygulla, P....
Journal of Crystal Growth.  602 (2023)  - p. 126980 , 2023
Link: https://doi.org/10.1016/..
 
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2

Ultrafast GaAs MOVPE growth for power electronics:

Lackner, D. ; Urban, T. ; Lang, R....
Journal of Crystal Growth.  613 (2023)  - p. 127201 , 2023
Link: https://doi.org/10.1016/..
 
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3

Nitrogen and carbon incorporation in GaNxAs1-x grown in a s..:

Ruiz, J.E. ; Lackner, D. ; Souza, P.L...
Journal of Crystal Growth.  557 (2021)  - p. 125998 , 2021
Link: https://doi.org/10.1016/..
 
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4

African Initiated Christianity and the Decolonisation of De..:

Öhlmann , 2020
Link: https://search.ebscohost..
 
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5

Single- and dual-variant atomic ordering in GaAsP compositi..:

France, R.M. ; Feifel, M. ; Belz, J....
Journal of Crystal Growth.  506 (2019)  - p. 61-70 , 2019
Link: https://doi.org/10.1016/..
 
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6

Hall characterization of epitaxial GaSb and AlGaAsSb layers..:

Predan, F. ; Ohlmann, J. ; Mrabet, S...
Journal of Crystal Growth.  496-497 (2018)  - p. 36-42 , 2018
Link: https://doi.org/10.1016/..
 
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7

Minority carrier diffusion length, lifetime and mobility in..:

Niemeyer, M. ; Ohlmann, J. ; Walker, A. W....
Journal of Applied Physics.  122 (2017)  11 - p. , 2017
Link: https://doi.org/10.1063/..
 
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8

Minority carrier recombination of ordered Ga0.51In0.49P at ..:

Dagan, R. ; Rosenwaks, Y. ; Kribus, A....
Applied Physics Letters.  109 (2016)  22 - p. , 2016
Link: https://doi.org/10.1063/..
 
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9

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE:

Sommer, N. ; Buss, R. ; Ohlmann, J....
Journal of Crystal Growth.  370 (2013)  - p. 191-196 , 2013
Link: https://doi.org/10.1016/..
 
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10

GaP heteroepitaxy on Si(001): Correlation of Si-surface str..:

Beyer, A. ; Ohlmann, J. ; Liebich, S....
Journal of Applied Physics.  111 (2012)  8 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Entwicklung des menschlichen Auges:

Tamm, E.R. ; Ohlmann, A.
Der Ophthalmologe.  109 (2012)  9 - p. 911-928 , 2012
Link: https://doi.org/10.1007/..
 
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12

Quantitative HAADF-studies of GaP/Si-interfaces:

Haas, B. ; Beyer, A. ; Ohlmann, J...
Microscopy and Microanalysis.  18 (2012)  S2 - p. 352-353 , 2012
Link: https://doi.org/10.1017/..
 
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13

Investigation of the GaP/Si Interface by High-Resolution Sc..:

Beyer, A ; Ohlmann, J ; Luysberg, M.
Microscopy and Microanalysis.  17 (2011)  S2 - p. 1390-1391 , 2011
Link: https://doi.org/10.1017/..
 
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14

Die Rolle von Myocilin bei der Pathogenese des primären Off..:

Ohlmann, A. ; Tamm, E. R.
Der Ophthalmologe.  99 (2002)  9 - p. 672-677 , 2002
Link: https://doi.org/10.1007/..
 
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15

Photoluminescence properties of sol–gel derived SiO2 layers..:

Švrček, V ; Pelant, I ; Rehspringer, J.-L...
Materials Science and Engineering: C.  19 (2002)  1-2 - p. 233-236 , 2002
Link: https://doi.org/10.1016/..
 
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