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Ohmi, Shun-ichiro
126  Ergebnisse:
Personensuche X
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1

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memo..:

Ohmi, Shun-ichiro
IEICE Transactions on Electronics.  , 2024
Link: https://doi.org/10.1587/..
 
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2

Fabrication of monolayer h-BN/LaB6 heterostructure thin fil..:

Nagaoka, Katsumi ; Aizawa, Takashi ; Ohmi, Shun-ichiro
Applied Surface Science.  669 (2024)  - p. 160478 , 2024
Link: https://doi.org/10.1016/..
 
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3

FOREWORD:

OHMI, Shun-ichiro
IEICE Transactions on Electronics.  E106.C (2023)  10 - p. 580-580 , 2023
Link: https://doi.org/10.1587/..
 
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4

3 V operation of pentacene-based floating-gate memory reali..:

Hong, Eun-Ki ; Ohmi, Shun-ichiro
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC1051 , 2023
Link: https://doi.org/10.35848..
 
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5

Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MF..:

SHIN, Joong-Won ; TANUMA, Masakazu ; OHMI, Shun-ichiro
IEICE Transactions on Electronics.  E106.C (2023)  10 - p. 581-587 , 2023
Link: https://doi.org/10.1587/..
 
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6

Effect of SiO2 Interfacial Layer Reduction on MFSFET With 5..:

Ohmi, Shun-ichiro ; Tanuma, Masakazu ; Shin, Joong-Won
IEEE Transactions on Semiconductor Manufacturing.  36 (2023)  4 - p. 553-557 , 2023
Link: https://doi.org/10.1109/..
 
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7

Preface: Special issue on control of semiconductor interfac..:

Shiojima, Kenji ; Nakatsuka, Osamu ; Kita, Koji..
Materials Science in Semiconductor Processing.  158 (2023)  - p. 107386 , 2023
Link: https://doi.org/10.1016/..
 
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8

MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insu..:

SHIN, Joong-Won ; TANUMA, Masakazu ; OHMI, Shun-ichiro
IEICE Transactions on Electronics.  E105.C (2022)  10 - p. 578-583 , 2022
Link: https://doi.org/10.1587/..
 
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9

Deposition rate dependence of the 5 nm-thick ferroelectric ..:

, In: 2022 International Symposium on Semiconductor Manufacturing (ISSM),
Tanuma, Masakazu ; Shin, Joong-Won ; Ohmi, Shun-ichiro - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
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10

Effects of sputtering power on the formation of 5 nm thick ..:

Shin, Joong-Won ; Tanuma, Masakazu ; Ohmi, Shun-ichiro
Japanese Journal of Applied Physics.  61 (2022)  SH - p. SH1010 , 2022
Link: https://doi.org/10.35848..
 
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11

The Effect of Inter Layers on the Ferroelectric Undoped HfO..:

TANUMA, Masakazu ; SHIN, Joong-Won ; OHMI, Shun-ichiro
IEICE Transactions on Electronics.  E105.C (2022)  10 - p. 584-588 , 2022
Link: https://doi.org/10.1587/..
 
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12

Sputtering Gas Pressure Dependence on the LaBxNy Insulator ..:

HONG, Eun-Ki ; PARK, Kyung Eun ; OHMI, Shun-ichiro
IEICE Transactions on Electronics.  E105.C (2022)  10 - p. 589-595 , 2022
Link: https://doi.org/10.1587/..
 
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13

Investigation of random telegraph noise characteristics of ..:

Pyo, Jooyoung ; Ihara, Akio ; Ohmi, Shun-ichiro
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1066 , 2022
Link: https://doi.org/10.35848..
 
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14

Multi-level 2-bit/cell operation utilizing Hf-based metal/o..:

Pyo, Jooyoung ; Ihara, Akio ; Zhang, Wendi..
Japanese Journal of Applied Physics.  61 (2022)  SB - p. SB1001 , 2022
Link: https://doi.org/10.35848..
 
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15

Investigation of the HfON Tunneling Layer of MONOS Device f..:

Pyo, Jooyoung ; Morita, Hiroki ; Ihara, Akio.
IEEE Transactions on Semiconductor Manufacturing.  34 (2021)  3 - p. 323-327 , 2021
Link: https://doi.org/10.1109/..
 
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