E-LIB Suche - Ergebnisse für: Ohta, Jitsuo

1

AlN/InAlN thin-film transistors fabricated on glass substra..:

Nakamura, Kyohei ; Kobayashi, Atsushi ; Ueno, Kohei..
Scientific Reports. 9 (2019) 1 - p. , 2019

Link: https://doi.org/10.1038/..

2

GaN-Based Light-Emitting Diodes with Graphene Buffers for T..:

OHTA, Jitsuo ; SHON, Jeong Woo ; UENO, Kohei..
IEICE Transactions on Electronics. E100.C (2017) 2 - p. 161-165 , 2017

Link: https://doi.org/10.1587/..

3

Epitaxial Growth of Thick Polar and Semipolar InN Films on ..:

Kobayashi, Atsushi ; Oseki, Masaaki ; Ohta, Jitsuo.
physica status solidi (b). 255 (2017) 3 - p. , 2017

Link: https://doi.org/10.1002/..

4

N-polar InGaN-based LEDs fabricated on sapphire via pulsed ..:

Ueno, Kohei ; Kishikawa, Eiji ; Ohta, Jitsuo.
APL Materials. 5 (2017) 2 - p. 026102 , 2017

Link: https://doi.org/10.1063/..

5

Low-temperature pulsed sputtering growth of InGaN multiple ..:

Arakawa, Yasuaki ; Ueno, Kohei ; Noguchi, Hidenari..
Japanese Journal of Applied Physics. 56 (2017) 3 - p. 031002 , 2017

Link: https://doi.org/10.7567/..

6

Electron transport properties of degenerate n-type GaN prep..:

Ueno, Kohei ; Fudetani, Taiga ; Arakawa, Yasuaki...
APL Materials. 5 (2017) 12 - p. 126102 , 2017

Link: https://doi.org/10.1063/..

7

Sputter synthesis of wafer-scale hexagonal boron nitride fi..:

Ohta, Jitsuo ; Fujioka, Hiroshi
APL Materials. 5 (2017) 7 - p. 076107 , 2017

Link: https://doi.org/10.1063/..

8

Fabrication of full-color GaN-based light-emitting diodes o..:

Kim, Hyeryun ; Ohta, Jitsuo ; Ueno, Kohei...
Scientific Reports. 7 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..

9

Pulsed sputtering epitaxial growth of m-plane InGaN lattice..:

Kobayashi, Atsushi ; Ohta, Jitsuo ; Fujioka, Hiroshi
Scientific Reports. 7 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..

10

Electrical properties of Si-doped GaN prepared using pulsed..:

Arakawa, Yasuaki ; Ueno, Kohei ; Imabeppu, Hideyuki...
Applied Physics Letters. 110 (2017) 4 - p. , 2017

Link: https://doi.org/10.1063/..

11

Characterization of GaN films grown on hafnium foils by pul..:

Kim, Hyeryun ; Ohta, Jitsuo ; Ueno, Kohei..
physica status solidi (a). 214 (2017) 10 - p. , 2017

Link: https://doi.org/10.1002/..

12

Epitaxial growth of semipolar InAlN films on yttria-stabili..:

Oseki, Masaaki ; Kobayashi, Atsushi ; Ohta, Jitsuo..
physica status solidi (b). 254 (2017) 10 - p. 1700211 , 2017

Link: https://doi.org/10.1002/..

13

Highly conductive Ge-doped GaN epitaxial layers prepared by..:

Ueno, Kohei ; Arakawa, Yasuaki ; Kobayashi, Atsushi..
Applied Physics Express. 10 (2017) 10 - p. 101002 , 2017

Link: https://doi.org/10.7567/..

14

High-current-density indium nitride ultrathin-film transist..:

Itoh, Takeki ; Kobayashi, Atsushi ; Ohta, Jitsuo.
Applied Physics Letters. 109 (2016) 14 - p. , 2016

Link: https://doi.org/10.1063/..

15

High hole mobility p-type GaN with low residual hydrogen co..:

Arakawa, Yasuaki ; Ueno, Kohei ; Kobayashi, Atsushi..
APL Materials. 4 (2016) 8 - p. 086103 , 2016

Link: https://doi.org/10.1063/..