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X
Ohyu, Kiyonori
6  Ergebnisse:
Personensuche X
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1

Improving hot-electron hardness of narrow channel MOSFETs b..:

Nishioka, Yasushiro ; Itoga, Toshihiko ; Ohyu, Kiyonori.
Solid-State Electronics.  34 (1991)  11 - p. 1197-1200 , 1991
Link: https://doi.org/10.1016/..
 
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2

Highly Reliable Thin Silicon Dioxide Layers Grown on Heavil..:

Ohyu, Kiyonori ; Wade, Yasuo ; Iijima, Shinpei.
Journal of The Electrochemical Society.  137 (1990)  7 - p. 2261-2265 , 1990
Link: https://doi.org/10.1149/..
 
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3

Advantages of Fluorine Introduction in Boron Implanted Shal..:

Ohyu, Kiyonori ; Itoga, Toshihiko ; Natsuaki, Nobuyoshi
Japanese Journal of Applied Physics.  29 (1990)  3R - p. 457 , 1990
Link: https://doi.org/10.1143/..
 
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4

The effect of fluorine implantation on the interface radiat..:

Nishioka, Yasushiro ; Ohyu, Kiyonori ; Ohji, Yuzuru...
Journal of Applied Physics.  66 (1989)  8 - p. 3909-3912 , 1989
Link: https://doi.org/10.1063/..
 
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5

Improvement of SiO2/Si Interface Properties Utilising Fluor..:

Ohyu, Kiyonori ; Itoga, Toshihiko ; Nishioka, Yasushiro.
Japanese Journal of Applied Physics.  28 (1989)  6R - p. 1041 , 1989
Link: https://doi.org/10.1143/..
 
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6

Recrystallization of Silicon-on-Insulator Structures by Sin..:

Ishiwara, Hiroshi ; Ohyu, Kiyonori ; Horita, Susumu.
Japanese Journal of Applied Physics.  24 (1985)  2R - p. 126 , 1985
Link: https://doi.org/10.1143/..
 
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