Onabe, F.
13  Ergebnisse:
Personensuche X
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4

Twin photoluminescence peaks from single isoelectronic trap..:

Endo, Y. ; Hijikata, Y. ; Yaguchi, H....
Physica E: Low-dimensional Systems and Nanostructures.  40 (2008)  6 - p. 2110-2112 , 2008
 
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5

Substrate-surface orientation dependence of N content in MO..:

Ono, W. ; Nakajima, F. ; Sanorpim, S...
Journal of Crystal Growth.  298 (2007)  - p. 135-139 , 2007
 
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6

MOVPE growth and optical characterization of GaPN films usi..:

Nakajima, F. ; Ono, W. ; Kuboya, S...
Journal of Crystal Growth.  298 (2007)  - p. 103-106 , 2007
 
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7

MOVPE and characterization of InAsN/GaAs multiple quantum w..:

Kuboya, S. ; Thieu, Q.T. ; Ono, W....
Journal of Crystal Growth.  298 (2007)  - p. 544-547 , 2007
 
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10

MOVPE growth and optical characterization of GaAsN films wi..:

Nakajima, F. ; Sanorpim, S. ; Ono, W...
physica status solidi (a).  203 (2006)  7 - p. 1641-1644 , 2006
 
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11

MOVPE growth of InAsN films on GaAs(001) substrates with an..:

Kuboya, S. ; Nakajima, F. ; Katayama, R..
physica status solidi (b).  243 (2006)  7 - p. 1411-1415 , 2006
 
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12

High‐nitrogen‐content InGaAsN films on GaAs grown by metalo..:

Sanorpim, S. ; Nakajima, F. ; Ono, W...
physica status solidi (a).  203 (2006)  7 - p. 1612-1617 , 2006
 
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13

Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy..:

Sanorpim, S. ; Nakajima, F. ; Imura, S....
physica status solidi (b).  234 (2002)  3 - p. 782-786 , 2002
 
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