Oni, L
3256  Ergebnisse:
Personensuche X
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2

DrGaN: an Integrated CMOS Driver-GaN Power Switch Technolog..:

, In: 2023 International Electron Devices Meeting (IEDM),
Then, Han Wui ; Radosavljevic, M. ; Bader, S.... - p. 1-4 , 2023
 
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3

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si C..:

Then, Han Wui ; Radosavljevic, M. ; Yu, Q....
IEEE Microwave and Wireless Technology Letters.  33 (2023)  6 - p. 835-838 , 2023
 
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5

Exploring manufacturability of novel 2D channel materials: ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Dorow, C. J. ; Schram, T. ; Smets, Q.... - p. 1-4 , 2023
 
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6

High Mobility TMD NMOS and PMOS Transistors and GAA Archite..:

, In: 2023 International Electron Devices Meeting (IEDM),
Penumatcha, A. ; O'Brien, K. P. ; Maxey, K.... - p. 1-4 , 2023
 
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7

Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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8

Assessment of causes and control of fire disaster in Arepo ..:

Oloke, O.C. ; Oluwatobi, A.O. ; Oni, A..
IOP Conference Series: Earth and Environmental Science.  993 (2022)  1 - p. 012004 , 2022
 
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9

Scaled Submicron Field-Plated Enhancement Mode High-K Galli..:

, In: 2022 International Electron Devices Meeting (IEDM),
Then, Han Wui ; Radosavljevic, M. ; Koirala, P.... - p. 35.1.1-35.1.4 , 2022
 
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10

Gate length scaling beyond Si: Mono-layer 2D Channel FETs R..:

, In: 2022 International Electron Devices Meeting (IEDM),
Dorow, C. J. ; Penumatcha, A. ; Kitamura, A.... - p. 7.5.1-7.5.4 , 2022
 
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11

300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scalin:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Maxey, K. ; Naylor, C. H. ; O'Brien, K. P.... - p. 419-420 , 2022
 
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12

Advancing 2D Monolayer CMOS Through Contact, Channel and In..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
O'Brien, K. P. ; Dorow, C. J. ; Penumatcha, A.... - p. 7.1.1-7.1.4 , 2021
 
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13

Effect of stirring on solid solution hardening:

Adigun, O.D. ; Oni, A. ; Obadele, B.A....
Materials Today: Proceedings.  46 (2021)  - p. 7740-7744 , 2021
 
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14

FeRAM using Anti-ferroelectric Capacitors for High-speed an..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Chang, S. -C. ; Haratipour, N. ; Shivaraman, S.... - p. 33.2.1-33.2.4 , 2021
 
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15

Opportunities in 3-D stacked CMOS transistors:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Radosavljevic, M. ; Huang, C.-Y. ; Rachmady, W.... - p. 34.1.1-34.1.4 , 2021
 
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